A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
Keyword(s):
ABSTRACTWe propose a model for laser-induced chemical vapor deposition in which the growth of hydrogenated amorphous silicon (a-Si:H) thin films is rate-controlled by the gas phase homogeneous thermal dissociation of SiH4 The gas temperature is determined by a steady-state balance between energy absorbed from the laser and energy lost by thermal conduction.The film properties are primarily controlled by the substrate temperature.
1999 ◽
Vol 17
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pp. 3240-3245
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2007 ◽
Vol 154
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pp. G122
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2008 ◽
Vol 69
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pp. 648-652
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2019 ◽
Vol 14
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pp. 1900087
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