Thermal behavior and stability of room‐temperature continuous AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si

1988 ◽  
Vol 64 (6) ◽  
pp. 2854-2860 ◽  
Author(s):  
D. C. Hall ◽  
D. G. Deppe ◽  
N. Holonyak ◽  
R. J. Matyi ◽  
H. Shichijo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Behavior ◽  
Room Temperature

Thermal behavior and stability of room-temperature continuous Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure lasers grown on Si

1988 ◽  
Vol 35 (12) ◽  
pp. 2457
Author(s):  
D.C. Hall ◽  
D.G. Deppe ◽  
N. Holonyak ◽  
R.J. Matyi ◽  
H. Shichijo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Behavior ◽  
Room Temperature

scholarly journals Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature

2021 ◽  
Vol 118 (22) ◽  
pp. 221103
Author(s):  
P. Schmiedeke ◽  
A. Thurn ◽  
S. Matich ◽  
M. Döblinger ◽  
J. J. Finley ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Threshold Strain ◽  
Low Threshold ◽  
Nanowire Lasers ◽  
Multi Quantum Well

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

On the occurrence of a metastable tetragonal t′-phase in a ZrO2−13.6 mole % MgO ceramic and its microscopic thermal evolution

1993 ◽  
Vol 8 (3) ◽  
pp. 605-610 ◽  
Author(s):  
M.C. Caracoche ◽  
P.C. Rivas ◽  
A.F. Pasquevich ◽  
A.R. López García ◽  
E. Aglietti ◽  
...  
Keyword(s):  
Thermal Behavior ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Single Phase ◽  
Thermal Evolution ◽  
Hyperfine Interactions ◽  
Correlation Technique ◽  
Cubic Field ◽  
Time Differential ◽  
T Phase

The time-differential perturbed angular correlation technique has been used to investigate the thermal behavior of a ZrO2−13.6 mole % MgO ceramic between room temperature and 1423 K. Two different quadrupole hyperfine interactions corresponding to a tetragonal structure have been found to result on cooling the ceramic from the single-phase cubic field. One of them agrees with that depicting the pure t-ZrO2 tetragonal phase and the other one has been interpreted as describing a high-MgO-content nontransformable t'–ZrO2 phase. As temperature increases, the latter gives rise to a similar but fluctuating interaction related to the oxygen vacancies mobility and which shows a thermal behavior analogous to that already reported for the stabilized cubic ZrO2. Above 1100 K these dynamic t'-sites transform into pure tetragonal ones which behave ordinarily, suffering the t → m phase transition when cooling to room temperature. Differences found between TDPAC results and information drawn from other techniques are discussed.

scholarly journals Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

1997 ◽  
Vol 2 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Quantum Well ◽  
Carrier Density ◽  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Quantum Well Structure ◽  
Multi Quantum Well ◽  
Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature

2003 ◽  
Vol 20 (8) ◽  
pp. 1376-1378 ◽  
Author(s):  
Zhang Xiong ◽  
Li Ai-Zhen ◽  
Zheng Yan-Lan ◽  
Xu Gang-Yi ◽  
Qi Ming
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Well Lasers ◽  
Multi Quantum Well
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