Isothermal Capacitance Transient Spectroscopy for Deep Levels in Co- and Mn-doped ZnO Single Crystals
2002 ◽
Vol 17
(6)
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pp. 1529-1535
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Keyword(s):
Mn Doped
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Deep donor levels in ZnO single crystals doped with transition metal (TM; Co or Mn) were characterized by isothermal capacitance transient spectroscopy (ICTS) applied to ZnO-based Schottky junctions, Au/ZnO (0001) or Ag/ZnO (0001). The barrier height at the junction and donor concentration was not influenced by TM. A deep donor level at 0.28 eV was detected by ICTS; however, its energy dispersion and concentration was composition independent. The effect of doping with TM was found in the magnitude of leakage current; in other words, the leakage current at the Au/ZnO:Mn junction was lower than the other junctions on undoped or Co-doped crystals.
2002 ◽
Vol 210-212
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pp. 1-14
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2011 ◽
Vol 21
(5)
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pp. 363-367
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2017 ◽
pp. 355-358
1989 ◽
Vol 28
(Part 2, No. 4)
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pp. L714-L716
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1991 ◽
Vol 74
(10)
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pp. 2675-2678
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1993 ◽
Vol 2
(8)
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pp. 1179-1184
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