Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)

2010 ◽  
Author(s):  
R. Esteve ◽  
J. Lorenzzi ◽  
S. A. Reshanov ◽  
N. Jegenyes ◽  
A. Schöner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Solid Transport ◽  
Mos Structures ◽  
Vapor Liquid

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

Vapor-liquid-solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with Pt-Si alloy flux and X-ray topography analysis of its dislocation propagation behaviors

CrystEngComm ◽  
2021 ◽  
Author(s):  
Naoki Sannodo ◽  
Tomohisa Kato ◽  
Yoshiyuki Yonezawa ◽  
Kazutoshi Kojima ◽  
Y. Matsumoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Homoepitaxial Growth ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Pt Alloy ◽  
Sic Films ◽  
Vapor Liquid

A vapor-liquid-solid (VLS) mechanism has been successfully applied to homoepitaxial growth of 4H-SiC films in chemical vapor deposition (CVD), the key to which is the use of a Si-Pt alloy...

Vapor-liquid-solid growth of silicon nanowires by chemical vapor deposition on implanted templates

2006 ◽  
Vol 100 (8) ◽  
pp. 084323 ◽  
Author(s):  
S. Christiansen ◽  
R. Schneider ◽  
R. Scholz ◽  
U. Gösele ◽  
Th. Stelzner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

2011 ◽  
Vol 50 (10R) ◽  
pp. 105002 ◽  
Author(s):  
Marolop Simanullang ◽  
Koichi Usami ◽  
Tetsuo Kodera ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid

Growth of Narrow and Straight Germanium Nanowires by Vapor–Liquid–Solid Chemical Vapor Deposition

2011 ◽  
Vol 50 (10) ◽  
pp. 105002 ◽  
Author(s):  
Marolop Simanullang ◽  
Koichi Usami ◽  
Tetsuo Kodera ◽  
Ken Uchida ◽  
Shunri Oda
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Germanium Nanowires ◽  
Vapor Liquid

scholarly journals Fabrication of InxGa1−xN Nanowires on Tantalum Substrates by Vapor-Liquid-Solid Chemical Vapor Deposition

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 990 ◽  
Author(s):  
Yan-Ling Hu ◽  
Yuqin Zhu ◽  
Huayu Ji ◽  
Qingyuan Luo ◽  
Ao Fu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Vapor Liquid Solid ◽  
Surface Pretreatment ◽  
Energy Conversion Devices ◽  
Vapor Liquid

InxGa1−xN nanowires (NWs) have drawn great attentions for their applications in optoelectronic and energy conversion devices. Compared to conventional substrates, metal substrates can offer InxGa1−xN NW devices with better thermal conductivity, electric conductivity, and mechanic flexibility. In this article, InxGa1−xN NWs were successfully grown on the surface of a tantalum (Ta) substrate via vapor-liquid-solid chemical vapor deposition (VLS-CVD), as characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), scanning and transmission electron microscope (STEM), and photoluminescence spectroscopy (PL). It was found that the surface pretreatment of Ta and the composition of metallic catalysts played important roles in the formation of NWs. A dimpled nitrided Ta surface combined with a catalyst of nickle is suitable for VLS-CVD growth of the NWs. The obtained InxGa1−xN NWs grew along the [1100] direction with the presence of basal stacking faults and an enriched indium composition of ~3 at.%. The successful VLS-CVD preparation of InxGa1−xN nanowires on Ta substrates could pave the way for the large-scale manufacture of optoelectronic devices in a more cost-effective way.

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