Critical current density and resistivity measurements for long patterned lines in Tl2Ba2CaCu2O8thin films

Gd is successfully embedded into YBa 2 Cu 3 O 7-δ by the solid state reaction. Rietveld refinements show that Gd replaces Cu in the unit cell. By magnetization and resistivity measurements, the effects of Gd -doping in YBCO on the critical current density J c and the critical temperature T c in YBa 2 Cu 3 O 7-δ( YBCO ) have been investigated. J c varies with the applied field and the content of Gd and has a maximum at x = 0.03. The characteristic behavior of J c with varying the Gd content can be explained in terms of the competition between two different effects caused by Gd -doping in YBCO: the inhomogeneity of grains distribution in nano-scale and the variation of superconductivity.

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Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100089718 ◽

1991 ◽

Vol 49 ◽

pp. 1080-1081

Author(s):

P. Lu ◽

W. Huang ◽

C.S. Chern ◽

Y.Q. Li ◽

J. Zhao ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Film Growth ◽

Chemical Vapor ◽

Microstructural Characterization ◽

Ion Milling ◽

Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

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Facet Topography and Dislocation Structure as a Possible Source for Electrical Heterogeneity in [001] TILT Bicrystals of YBa2Cu3O7-δ

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164155 ◽

1996 ◽

Vol 54 ◽

pp. 338-339

Author(s):

I-Fei Tsu ◽

D.L. Kaiser ◽

S.E. Babcock

Keyword(s):

Grain Boundary ◽

Critical Current Density ◽

Critical Current ◽

Current Density ◽

Electromagnetic Properties ◽

Length Scale ◽

Density Values ◽

Current Densities ◽

Applied Fields ◽

A Current

A current theme in the study of the critical current density behavior of YBa2Cu3O7-δ (YBCO) grain boundaries is that their electromagnetic properties are heterogeneous on various length scales ranging from 10s of microns to ˜ 1 Å. Recently, combined electromagnetic and TEM studies on four flux-grown bicrystals have demonstrated a direct correlation between the length scale of the boundaries’ saw-tooth facet configurations and the apparent length scale of the electrical heterogeneity. In that work, enhanced critical current densities are observed at applied fields where the facet period is commensurate with the spacing of the Abrikosov flux vortices which must be pinned if higher critical current density values are recorded. To understand the microstructural origin of the flux pinning, the grain boundary topography and grain boundary dislocation (GBD) network structure of [001] tilt YBCO bicrystals were studied by TEM and HRTEM.

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