A Monte Carlo simulation of anisotropic electron transport in silicon including full band structure and anisotropic impact‐ionization model

1994 ◽  
Vol 75 (1) ◽  
pp. 297-312 ◽  
Author(s):  
T. Kunikiyo ◽  
M. Takenaka ◽  
Y. Kamakura ◽  
M. Yamaji ◽  
H. Mizuno ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Band Structure ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model ◽  
Full Band Structure

Impact ionization model for full band Monte Carlo simulation

1994 ◽  
Vol 75 (7) ◽  
pp. 3500-3506 ◽  
Author(s):  
Y. Kamakura ◽  
H. Mizuno ◽  
M. Yamaji ◽  
M. Morifuji ◽  
K. Taniguchi ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

Impact ionization model for full band Monte Carlo simulation in GaAs

1996 ◽  
Vol 79 (5) ◽  
pp. 2473-2480 ◽  
Author(s):  
H. K. Jung ◽  
K. Taniguchi ◽  
C. Hamaguchi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Impact Ionization ◽  
Full Band ◽  
Ionization Model

An improved impact‐ionization model for high‐energy electron transport in Si with Monte Carlo simulation

1991 ◽  
Vol 69 (4) ◽  
pp. 2300-2311 ◽  
Author(s):  
R. Thoma ◽  
H. J. Peifer ◽  
W. L. Engl ◽  
W. Quade ◽  
R. Brunetti ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Impact Ionization ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Ionization Model

scholarly journals Ensemble Monte Carlo Study of Electron Transport in Bulk Indium Nitride

1999 ◽  
Vol 4 (S1) ◽  
pp. 781-786
Author(s):  
E. Bellotti ◽  
B. Doshi ◽  
K. F. Brennan ◽  
P. P. Ruden
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Model Comparison ◽  
Phonon Scattering ◽  
Impact Ionization ◽  
Indium Nitride ◽  
Monte Carlo Model ◽  
Breakdown Field ◽  
Ensemble Monte Carlo ◽  
Full Band

Ensemble Monte Carlo calculations of electron transport at high applied electric field strengths in bulk, wurtzite phase InN are presented. The calculations are performed using a full band Monte Carlo simulation that includes a pseudopotential band structure, all of the relevant phonon scattering agents, and numerically derived impact ionization transition rates. The full details of the first five conduction bands, which extend in energy to about 8 eV above the conduction band minimum, are included in the simulation. The electron initiated impact ionization coefficients and quantum yield are calculated using the full band Monte Carlo model. Comparison is made to previous calculations for bulk GaN and ZnS. It is found that owing to the narrower band gap in InN, a lower breakdown field exists than in either GaN or ZnS.

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