Laser‐energy dependence of optical emission from radicals and atoms in laser‐induced chemical‐vapor deposition of SiC

1995 ◽  
Vol 78 (5) ◽  
pp. 3525-3527
Author(s):  
Toru Mizunami ◽  
Naotake Toyama ◽  
Takahiro Sakaguchi
Keyword(s):  
Chemical Vapor Deposition ◽  
Energy Dependence ◽  
Vapor Deposition ◽  
Laser Energy ◽  
Chemical Vapor ◽  
Optical Emission

scholarly journals Optical Emission from C2– Anions in Microwave-Activated CH4/H2 Plasmas for Chemical Vapor Deposition of Diamond

2017 ◽  
Vol 121 (14) ◽  
pp. 2760-2772 ◽  
Author(s):  
E. J. D. Mahoney ◽  
B. S. Truscott ◽  
M. N. R. Ashfold ◽  
Yu. A. Mankelevich
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Emission

Gas Phase Reactions Relevant to Chemical Vapor Deposition: Optical Diagnostics

1989 ◽  
Vol 168 ◽  
Author(s):  
D. Burgess
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Laser Photolysis ◽  
Particle Nucleation ◽  
Gas Phase Reactions ◽  
Decomposition Processes ◽  
Rate Of Reaction

AbstractLaser photolysis, optical emission, and laser-induced fluorescence (LIF) were used to investigate laser driven decomposition processes in the gas phase pertaining to the systems: SiH4 → Si (s) and SiH4 → NH3 → Si3N4 (s). These processes are important to silicon/ silicon-nitride chemical vapor deposition, flame-driven gas phase silicon-particle nucleation, and laser-induced processes for materials fabrication. UV laser photolysis was used to generate SiHx and NHx species from silane and ammonia. A number of photofragments were identified by emission from excited states. The rate of reaction of NH2 with silane was measured using LIF to detect NH2 as a function of time following photolysis of ammonia

Optical emission spectroscopy during the bias-enhanced nucleation of diamond microcrystals by microwave plasma chemical vapor deposition process

1996 ◽  
Vol 11 (11) ◽  
pp. 2852-2860 ◽  
Author(s):  
H. C. Barshilia ◽  
B. R. Mehta ◽  
V. D. Vankar
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

Microwave plasma chemical vapor deposition (MWPCVD) process has been used to grow diamond thin films on silicon substrates from CH4–H2 gas mixture. Bias-enhanced nucleation (BEN) pretreatment has been used to increase the density of diamond nuclei. Various species in the CH4–H2 plasma have been identified using optical emission spectroscopy (OES), and their effect on the film microstructure has been studied. During the pretreatment process the emission intensities of CH, CH+, C2, H, and H2* species have been found to increase significantly for a negative dc bias voltage |VB| > 60 V. The higher concentration of excited species and the associated effects play a significant role in the growth process. A very thin layer of a-C containing predominant sp3 bonded carbon species in the initial stages of the growth is found to be present in these films. The microstructure of the films has been found to be very sensitive to the biasing conditions.

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