scholarly journals Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate

1996 ◽  
Vol 80 (9) ◽  
pp. 5014-5020 ◽  
Author(s):  
Yong Kim ◽  
Shu Yuan ◽  
R. Leon ◽  
C. Jagadish ◽  
M. Gal ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wire ◽  
Gaas Substrate ◽  
Anodic Oxide ◽  
Structural And Optical Properties

scholarly journals Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method

1996 ◽  
Vol 1 ◽  
Author(s):  
T. S. Cheng ◽  
C. T. Foxon ◽  
N. J Jeffs ◽  
O. H. Hughes ◽  
B. G. Ren ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Gaas Substrate ◽  
Plasma Source ◽  
Columnar Structure ◽  
Structural And Optical Properties ◽  
Active Nitrogen ◽  
X Ray ◽  
Zinc Blende ◽  
Gaas Substrates

Films of GaN have been grown using a modified MBE method in which the active nitrogen is supplied from an RF activated plasma source. Wurtzite films grown on (0 0 1) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure; the (0 0 0 1) planes of the layers being parallel to the (0 0 1) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (1 1 1)A and (1 1 1)B oriented GaAs substrates. The improved structural properties of such films, assessed using x-ray and TEM methods, correlate with better low temperature PL performance.

scholarly journals In-mole-fraction of InGaAs Insertion Layers Effects on the Structural and Optical Properties of GaSb Quantum Dots Grown on (001) GaAs Substrate

1970 ◽  
Vol 10 (2) ◽  
pp. 129-135
Author(s):  
Suwit Kiravittaya ◽  
Kamonchanok Khoklang ◽  
Supachok Thainoi ◽  
Somsak Panyakeow ◽  
Somchai Ratanathammaphan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Mole Fraction ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Indium Content ◽  
Structural And Optical Properties ◽  
Size Change ◽  
Shape And Size

GaSb quantum dots (QDs) have been grown by solid-source molecular beam epitaxy on a 4-monolayer (ML) InxGa1-xAs (x = 0.07, 0.15, 0.20, and 0.25) to investigate the effects of In-mole-fraction of InGaAs insertion layers on the structural and optical properties of the GaSb QDs. The density of grown GaSb QDs is approximately 1.2-2.8109 cm−2 on In-GaAs insertion layers which depends on the In-molefraction. Dot shape and size change substantially when In-mole-fraction of InGaAs insertion layers is varied. The uniformity of GaSb QDs improves when the indium content increases. The change in freestanding QD morphology is likely due to the modified strain at different values of indium compositions in InGaAs insertion layers. The effects of In-molefraction of InGaAs insertion layer on optical properties of the QDs are studied by photoluminescence (PL). PL results show the blueshift of the emission when the indium content in InGaAs insertion layer increases.

Structural and Optical Properties of Cu2ZnSn(SxSe1–x)4 Thin Films

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural And Optical Properties

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

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