Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

2011 ◽  
Vol 99 (11) ◽  
pp. 113108 ◽  
Author(s):  
Arief Udhiarto ◽  
Daniel Moraru ◽  
Takeshi Mizuno ◽  
Michiharu Tabe
2006 ◽  
Vol 74 (23) ◽  
Author(s):  
Yukinori Ono ◽  
Jean-Francois Morizur ◽  
Katsuhiko Nishiguchi ◽  
Kei Takashina ◽  
Hiroshi Yamaguchi ◽  
...  

2011 ◽  
Vol 470 ◽  
pp. 33-38
Author(s):  
Miftahul Anwar ◽  
Daniel Moraru ◽  
Yuya Kawai ◽  
Maciej Ligowski ◽  
Takeshi Mizuno ◽  
...  

Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.


2009 ◽  
Vol 48 (9) ◽  
pp. 091201
Author(s):  
Jong Pil Kim ◽  
Jae Young Song ◽  
Sang Wan Kim ◽  
Jae Hyun Park ◽  
Woo Young Choi ◽  
...  

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