Temperature dependence of coercivity in Co-based longitudinal thin-film recording media

1997 ◽  
Vol 81 (8) ◽  
pp. 3952-3954 ◽  
Author(s):  
Tao Pan ◽  
Geoffrey W. D. Spratt ◽  
Li Tang ◽  
Li-Lien Lee ◽  
Yongchang Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Recording Media

Overwrite Modulation in Co-Based Thin Film Longitudinal Recording Media

1994 ◽  
Vol 18 (S_1_PMRC_94_1) ◽  
pp. S1_467-470
Author(s):  
Michinobu SUEKANE ◽  
Masao MIYAMURA
Keyword(s):  
Thin Film ◽  
Recording Media ◽  
Longitudinal Recording

Analytical model and temperature dependence of the thin film SOI FET

1995 ◽  
Vol 38 (5) ◽  
pp. 949-959 ◽  
Author(s):  
S Scheinert ◽  
G Paasch ◽  
D Schipanski
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Analytical Model

Corrosion of thin film cobalt based magnetic recording media

1987 ◽  
Vol 23 (5) ◽  
pp. 3645-3647 ◽  
Author(s):  
V. Novotny ◽  
G. Itnyre ◽  
A. Homola ◽  
L. Franco
Keyword(s):  
Thin Film ◽  
Magnetic Recording ◽  
Recording Media ◽  
Magnetic Recording Media

Submicron studies of recording media using thin‐film magnetic scanning probes

1995 ◽  
Vol 66 (19) ◽  
pp. 2585-2587 ◽  
Author(s):  
Scott Manalis ◽  
Kenneth Babcock ◽  
James Massie ◽  
Virgil Elings ◽  
Matthew Dugas
Keyword(s):  
Thin Film ◽  
Recording Media ◽  
Scanning Probes

Pressure and Temperature Dependence of Field-Induced Oscillation in Two-Terminal Device Based on Vanadium Dioxide Thin Film

2019 ◽  
Vol 19 (3) ◽  
pp. 1500-1505
Author(s):  
Min Seok Kim ◽  
Jihoon Kim ◽  
Sungwook Choi ◽  
Seul-Lee Lee ◽  
Sun Jae Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Vanadium Dioxide ◽  
Terminal Device

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

Sign in / Sign up

Export Citation Format

Share Document