scholarly journals Temperature dependence of thin film spiral inductors on Alumina over a temperature range of 25 to 475° C

2010 ◽  
Author(s):  
George E. Ponchak ◽  
Jennifer L. Jordan ◽  
Maximilian C Scardelletti
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Temperature Range ◽  
Spiral Inductors

TEM Observation and Ionic Conductivity Study of Li2SiO3 Thin-Film on Sapphire Substrate

2013 ◽  
Vol 596 ◽  
pp. 15-20 ◽  
Author(s):  
Shinichi Furusawa ◽  
Takao Tsurui ◽  
Kouhei Shimizu
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Ionic Conductivity ◽  
Temperature Dependence ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Range ◽  
Transmission Electron ◽  
Lithium Ionic Conductor

Thin-film samples of the lithium ionic conductor Li2SiO3(LSO) were deposited on an A-plane sapphire substrate via the pulsed laser deposition (PLD) method, and the irreversible temperature dependence of the ionic conductivity in the thin-film samples was studied. Via transmission electron microscopy (TEM) observations of annealed LSO thin-film, it was found that the as-prepared LSO thin-film was amorphous over the temperature rangeT490 K, and that nanocrystals existed in the annealed LSO thin-film in the temperature rangeT550 K. Further more, it was clarified the irreversible temperature dependence of the ionic conductivity is due to the generation of nanocrystals.

Specific features of the temperature dependence of tryptophan fluorescence lifetime in the temperature range of −170–20 °C

2020 ◽  
Vol 393 ◽  
pp. 112435
Author(s):  
Peter P. Knox ◽  
Vladimir V. Gorokhov ◽  
Boris N. Korvatovsky ◽  
Nadezhda P. Grishanova ◽  
Sergey N. Goryachev ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Fluorescence Lifetime ◽  
Tryptophan Fluorescence ◽  
Temperature Range

Analytical model and temperature dependence of the thin film SOI FET

1995 ◽  
Vol 38 (5) ◽  
pp. 949-959 ◽  
Author(s):  
S Scheinert ◽  
G Paasch ◽  
D Schipanski
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Analytical Model

Temperature dependence of chlorine-35 N.Q.R. in 2,6-Dichlorophenol

1978 ◽  
Vol 31 (4) ◽  
pp. 791 ◽  
Author(s):  
R Chandramani ◽  
SP Basavaraju ◽  
N Devaraj
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Temperature Range ◽  
Temperature Coefficients ◽  
Brown's Method

Chlorine n.q.r, in 2,6-dichlorophenol has been investigated at temperatures from 77 K to room temperature. Two resonance lines due to chemically inequivalent sites have been observed throughout this temperature range. Torsional frequencies of the molecule have been calculated at temperatures from 77 to 300 K according to Bayer's theory and Brown's method. Also the temperature coefficients of the torsional frequencies have been calculated.

Temperature dependence of coercivity in Co-based longitudinal thin-film recording media

1997 ◽  
Vol 81 (8) ◽  
pp. 3952-3954 ◽  
Author(s):  
Tao Pan ◽  
Geoffrey W. D. Spratt ◽  
Li Tang ◽  
Li-Lien Lee ◽  
Yongchang Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Recording Media

scholarly journals PSEUDO-GAP FEATURES OF INTRINSIC TUNNELING IN (HgBr2)-Bi2212 SINGLE CRYSTALS

1999 ◽  
Vol 13 (29n31) ◽  
pp. 3758-3763 ◽  
Author(s):  
AUGUST YURGENS ◽  
DAG WINKLER ◽  
TORD CLAESON ◽  
SEONG-JU HWANG ◽  
JIN-HO CHOY
Keyword(s):  
Temperature Dependence ◽  
Single Crystals ◽  
Room Temperature ◽  
Unit Cell ◽  
Superconducting Gap ◽  
Axis Direction ◽  
Temperature Range ◽  
Dynamic Conductance

The c-axis tunneling properties of both pristine Bi2212 and its HgBr 2 intercalate have been measured in the temperature range 4.2-250 K. Lithographically patterned 7-10 unit-cell heigh mesa structures on the surfaces of these single crystals were investigated. Clear SIS-like tunneling curves for current applied in the c-axis direction have been observed. The dynamic conductance d I/ d V(V) shows both sharp peaks corresponding to a superconducting gap edge and a dip feature beyond the gap, followed by a wide maximum, which persists up to a room temperature. Shape of the temperature dependence of the c-axis resistance does not change after the intercalation suggesting that a coupling between CuO 2-bilayers has little effect on the pseudogap.

The Design of AlGaN/GaN HEFT-Micro-Accelerometer and Temperature- Dependence Electrical Performance

2011 ◽  
Vol 483 ◽  
pp. 174-179 ◽  
Author(s):  
Ting Liang ◽  
Jian Jun Tang ◽  
Qian Qian Zhang ◽  
Yong Wang ◽  
Jing Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electrical Performance ◽  
Saturation Current ◽  
Temperature Range ◽  
Different Temperatures ◽  
Piezoresistance Coefficient ◽  
Micro Accelerometer

In this paper, We use a novel principle to detect acceleration and report how I-V characteristics and piezoresistance coefficient of AlGaN/GaN HEFT-micro-accelerometer are affected by setting different temperatures. It is shown that saturation current of device would go down if the temperature goes up, which is about 0.028mA/°C, based on the research. However, the device can work well at the temperature range of -50°C to 50°C, which indicates that it can work safely in the larger temperature range.

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