Analytical model and temperature dependence of the thin film SOI FET

1995 ◽  
Vol 38 (5) ◽  
pp. 949-959 ◽  
Author(s):  
S Scheinert ◽  
G Paasch ◽  
D Schipanski
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Analytical Model

Temperature dependence of coercivity in Co-based longitudinal thin-film recording media

1997 ◽  
Vol 81 (8) ◽  
pp. 3952-3954 ◽  
Author(s):  
Tao Pan ◽  
Geoffrey W. D. Spratt ◽  
Li Tang ◽  
Li-Lien Lee ◽  
Yongchang Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Recording Media

An analytical model for the above-threshold characteristics of polysilicon thin-film transistors

1995 ◽  
Vol 42 (7) ◽  
pp. 1240-1246 ◽  
Author(s):  
Horng Nan Chern ◽  
Chung Len Lee ◽  
Tan Fu Lei
Keyword(s):  
Thin Film ◽  
Analytical Model ◽  
Thin Film Transistors

Pressure and Temperature Dependence of Field-Induced Oscillation in Two-Terminal Device Based on Vanadium Dioxide Thin Film

2019 ◽  
Vol 19 (3) ◽  
pp. 1500-1505
Author(s):  
Min Seok Kim ◽  
Jihoon Kim ◽  
Sungwook Choi ◽  
Seul-Lee Lee ◽  
Sun Jae Jung ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Vanadium Dioxide ◽  
Terminal Device

scholarly journals Design of thin film solar cells based on a unified simple analytical model

2017 ◽  
Vol 15 (6) ◽  
pp. 599-608 ◽  
Author(s):  
Armando Acevedo-Luna ◽  
Roberto Bernal-Correa ◽  
Jorge Montes-Monsalve ◽  
Arturo Morales-Acevedo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Analytical Model ◽  
Thin Film Solar Cells ◽  
Simple Analytical Model

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

Temperature dependence on p-Cu2O thin film electrochemically deposited onto copper substrate

2014 ◽  
Vol 301 ◽  
pp. 369-377 ◽  
Author(s):  
Mao-Chia Huang ◽  
TsingHai Wang ◽  
Wen-Sheng Chang ◽  
Jing-Chie Lin ◽  
Ching-Chen Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Copper Substrate ◽  
Electrochemically Deposited ◽  
Cu2o Thin Film
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