Growth kinetics of CoSi formed by ion beam irradiation at room temperature

Ceramics with III-IV pyrochlore compositions, A3+2B4+2O7 (A = Y and rare earth elements; B = Ti, Zr, Sn, or Hf), show a wide range of responses to ion-beam irradiation. To evaluate the role of the B-site cations on the radiation stability ofthe pyrochlore structure-type, Gd2Sn2O7 and Gd2Hf2O7 have been irradiated by1 MeV Kr+. The results are discussed in terms of the ionic size and type ofbonding of Sn4+ and Hf4+ and compared to previous results for titanate andzirconate pyrochlores. Gd2Sn2O7 is sensitive to ion beam–induced amorphizationwith a critical amorphization dose of approximately 3.4 displacements per atom(dpa) (2.62 × 1015 ions/cm2) at room temperature and a critical amorphization temperature of approximately 350 K. Gd2Hf2O7 does not become amorphous at adose of approximately 4.54 displacement per [lattice] atom (3.13 × 1015 ions/cm2) at room temperature, but instead is transformed to a disordered fluorite structure upon ion-beam irradiation. Although the radius ratio of the A- to B-site cations provides a general indication of the type of radiation response of different pyrochlore compositions, the results for Gd2Sn2O7 emphasize the importance of bond type, particularly the covalency of the 〈Sn–O〉 bond in determining the radiation response.

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Reaction kinetics of radiation-induced defects in vitreous silica under ion beam irradiation

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2008.09.025 ◽

2009 ◽

Vol 384 (1) ◽

pp. 19-24 ◽

Cited By ~ 3

Author(s):

Kimikazu Moritani ◽

Jun Takemoto ◽

Ikuji Takagi ◽

M. Akiyoshi ◽

Hirotake Moriyama

Keyword(s):

Reaction Kinetics ◽

Ion Beam ◽

Vitreous Silica ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Radiation Induced ◽

Induced Defects ◽

Kinetics Of

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Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon

Applied Physics Letters ◽

10.1063/1.103644 ◽

1990 ◽

Vol 57 (6) ◽

pp. 554-556 ◽

Cited By ~ 14

Author(s):

C. Spinella ◽

S. Lombardo ◽

S. U. Campisano

Keyword(s):

Amorphous Silicon ◽

Grain Growth ◽

Growth Kinetics ◽

Ion Beam ◽

Chemical Vapor ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Chemical Vapor Deposited ◽

Grain Growth Kinetics

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Influence of Beam Energy of Ions on Properties of Nickel Nanowires

10.3762/bxiv.2021.3.v1 ◽

2021 ◽

Author(s):

Shehla Honey ◽

Jamil Asim ◽

Adnan Shahid Khan ◽

Aisida O Samson ◽

Ishaq Ahmad ◽

...

Keyword(s):

Electrical Conductivity ◽

Beam Energy ◽

Room Temperature ◽

Ion Beam ◽

Point Contact ◽

Optical Transmittance ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Nickel Nanowires

Electrical conductivity and optical transmittance of Nickel Nanowires (Ni-NWs) networks was reported in this work. The Ni-NWs was irradiated with 3.5 MeV, 3.8 MeV and 4.11 MeV proton (H+) ions at room temperature. The electrical conductivity of Ni-NWs networks was observed to increase with the increase in beam energies of H+ ions. With the increase in ions beam energies, electrical conductivity increases and this may be attributed to a reduction in wire-wire point contact resistance due to the irradiation-induced welding of NWs. Welding is probably initiated due to H+ ions-irradiation induced heating effect that also improved the crystalline quality of nanowires (NWs). After ion beam irradiation, localize heat is generated in nanowires due to ionization which was also verified by SRIM simulation. Optical transmittance is increased with increase in energy of H+ ions. The Ni-NWs networks subjected to an ion beam irradiation to observe corresponding changes in electrical conductivity and optical transparencies are promising for various nano-technological applications as highly transparent and conducting electrodes.

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Production and reaction kinetics of radiation-induced defects in α-alumina and sapphire under ion beam irradiation

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2007.06.001 ◽

2008 ◽

Vol 373 (1-3) ◽

pp. 157-163 ◽

Cited By ~ 7

Author(s):

Kimikazu Moritani ◽

Yoichi Teraoka ◽

Ikuji Takagi ◽

Masafumi Akiyoshi ◽

Hirotake Moriyama

Keyword(s):

Reaction Kinetics ◽

Ion Beam ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Radiation Induced ◽

Induced Defects ◽

Kinetics Of

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Создание функциональных наноструктур под действием ионного облучения

Журнал технической физики ◽

10.21883/jtf.2021.10.51367.138-21 ◽

2021 ◽

Vol 91 (10) ◽

pp. 1532

Author(s):

К.Е. Приходько ◽

М.М. Дементьева

Keyword(s):

Room Temperature ◽

Ion Beam ◽

Research Centre ◽

Aluminum Surface ◽

Beam Irradiation ◽

Kurchatov Institute ◽

Ion Beam Irradiation ◽

Insulating Layer ◽

Functional Nanostructures ◽

Oxygen Ions

The paper describes a method developed in National Research Centre “Kurchatov Institute” for creating different functional nanostructures using ion beam irradiation. As an example, the formation of an integrated resistive elements in a low-temperature NbN superconductor nanowire is demonstrated. The possibility of producing an insulating layer of aluminum oxide with a thickness of 15 nm on the aluminum surface at room temperature under 0.2 keV oxygen ions irradiation was shown.

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