Production and reaction kinetics of radiation-induced defects in α-alumina and sapphire under ion beam irradiation

Implanted, polymeric films have been produced by accelerator-ion-beam irradiation of metallic substrates immersed in hydrocarbon gases. Typical substrates include silver, aluminum, and steel; hydrocarbon gases include 1,3 butadiene and ethylene at 6.6 Pa pressure; ion beams employed include singly ionized H, He, and Ar at 30 keV. Experimental procedures and corrosion-resistance properties of the films are reviewed (each discussed elsewhere). A theory of the film-formation process is presented. It is concluded that the films form as the result of a two-stage process: glow-discharge adhesion and polymerization followed by radiation-induced implantation resulting from collisional recoil and substrate sputtering.

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Growth kinetics of CoSi formed by ion beam irradiation at room temperature

Journal of Applied Physics ◽

10.1063/1.366460 ◽

1997 ◽

Vol 82 (11) ◽

pp. 5480-5483 ◽

Cited By ~ 15

Author(s):

A. Baba ◽

H. Aramaki ◽

T. Sadoh ◽

T. Tsurushima

Keyword(s):

Growth Kinetics ◽

Room Temperature ◽

Ion Beam ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Kinetics Of

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Ion Beam Irradiation Effects on Polymers

MRS Proceedings ◽

10.1557/proc-792-r3.29 ◽

2003 ◽

Vol 792 ◽

Author(s):

Mircea Chipara

Keyword(s):

Experimental Data ◽

Free Radicals ◽

Energy Gap ◽

Ion Beam ◽

Beam Irradiation ◽

Irradiation Effects ◽

Ion Beam Irradiation ◽

Radiation Induced ◽

Main Effects

ABSTRACTThe main effects of the interaction of accelerated ions with polymeric targets are critically reviewed. The possibility of a relatively reduced heating of polymer during ion beam bombardment is analyzed. Experimental data pointing towards various radiation-induced modifications in polycarbonate (free radicals production, modifications of the energy gap) are discussed.

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Radiation-induced ICAM-1 Expression via TGF-β1 Pathway on Human Umbilical Vein Endothelial Cells; Comparison between X-ray and Carbon-ion Beam Irradiation

Journal of Radiation Research ◽

10.1269/jrr.10061 ◽

2011 ◽

Vol 52 (3) ◽

pp. 287-292 ◽

Cited By ~ 12

Author(s):

Hiroki KIYOHARA ◽

Yasuki ISHIZAKI ◽

Yoshiyuki SUZUKI ◽

Hiroyuki KATOH ◽

Nobuyuki HAMADA ◽

...

Keyword(s):

Endothelial Cells ◽

Umbilical Vein ◽

Ion Beam ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

X Ray ◽

Radiation Induced ◽

Carbon Ion Beam ◽

Umbilical Vein Endothelial Cells ◽

Tgf Β1

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High-resolution TEM observation of displacement cascades in krypton ion irradiated silicate minerals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088865 ◽

1991 ◽

Vol 49 ◽

pp. 910-911

Author(s):

L.M. Wang ◽

M.L. Miller ◽

R.C. Ewing

Keyword(s):

Nuclear Waste ◽

Ion Beam ◽

Alpha Decay ◽

Ceramic Materials ◽

Atomic Level ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Fundamental Understanding ◽

High Resolution Tem ◽

Radiation Induced

Radiation induced amorphization (or metamictization) happens naturally in many U and Th containing minerals due to alpha decay of the radioactive actinides over the lengthy geological times. It has been shown recently that the process can be simulated very efficiently by ion beam irradiation. Detailed study at atomic level on this crystalline to aperiodic transition is necessary for the fundamental understanding of the process which is important to several technological fields, such as nuclear waste disposal and ionbeam modification of ceramic materials.

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Enhancement of Flux Pinning Force by Ion Beam Irradiation of Epitaxial Ba2Cu3O7-δ Films

MRS Proceedings ◽

10.1557/proc-275-293 ◽

1992 ◽

Vol 275 ◽

Cited By ~ 1

Author(s):

M. P. Siegal ◽

Julia M. Phillips ◽

R. B. van Dover ◽

E. M. Gyorgy ◽

A. E. White ◽

...

Keyword(s):

Flux Pinning ◽

Ion Beam ◽

Ex Situ ◽

Pinning Force ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Ion Channeling ◽

Large Factor ◽

Induced Defects ◽

Flux Pinning Force

ABSTRACTEpitaxial Ba2YCu3O7-δ (BYCO) films grown by the ex situ BaF2 process are comparable to single crystals both in crystalline integrity (RBS/ion channeling χmin < 3%) and the value and temperature dependence of the critical current (Jc) in an applied magnetic field in the BYCO (001) direction of Ha = 0.9T. With the appropriate dose of either 2 MeV H+ or 135Xe+, we are able to enhance Jc by a factor of 2 in H = 0.9T with little effect on Tc. The ability to change Jc by such a large factor in these films is a prerequisite for isolation and study of the induced defects and study their properties.

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