Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

1998 ◽  
Vol 83 (2) ◽  
pp. 1114-1119 ◽  
Author(s):  
B. Panda ◽  
A. Dhar ◽  
G. D. Nigam ◽  
D. Bhattacharya ◽  
S. K. Ray
Keyword(s):  
Radio Frequency ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Sputter Deposition ◽  
Radio Frequency Magnetron ◽  
Plasma Parameters ◽  
Barium Strontium ◽  
Magnetron Sputter Deposition ◽  
Film Microstructure ◽  
Magnetron Sputter

Noble gas influence on reactive radio frequency magnetron sputter deposition of TiN films

Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 635-640 ◽  
Author(s):  
C.P Lungu ◽  
M Futsuhara ◽  
O Takai ◽  
M Braic ◽  
G Musa
Keyword(s):  
Radio Frequency ◽  
Noble Gas ◽  
Sputter Deposition ◽  
Radio Frequency Magnetron ◽  
Tin Films ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

Electric properties of barium–strontium titanate thin films deposited by two-step radio-frequency sputtering

2001 ◽  
Vol 16 (9) ◽  
pp. 2680-2686 ◽  
Author(s):  
J. S. Fang ◽  
C. T. Chang ◽  
T. S. Chin
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Layer Thickness ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Current Density ◽  
Dielectric Breakdown ◽  
Barium Strontium

Barium-strontium titanate (BST) thin films were prepared by a two-step deposition using radio-frequency magnetron sputtering on Pt/Ti/SiO2-buffered Si(100) substrate. The initial BST layer thickness and intermediate annealing strongly affect the resultant electric properties of the two-step BST thin films. The optimal two-step BST films, with a first-layer thickness of 30 nm intermediate annealed at 610 °C under 1 torr oxygen. The dielectric breakdown and leakage current density of the two-step film are above 625 kV/cm and 9.5 nA/cm2 at 100 kV/cm, respectively, compared with 400 kV/cm and 17 nA/cm2 for the one-step films. We conclude that the two-step deposition dramatically improves dielectric breakdown and enhances leakage current density while keeping the dielectric constant uninfluenced.

Barium–strontium–titanate thin films for application in radio-frequency-microelectromechanical capacitive switches

2002 ◽  
Vol 80 (7) ◽  
pp. 1255-1257 ◽  
Author(s):  
S. W. Kirchoefer ◽  
E. J. Cukauskas ◽  
N. S. Barker ◽  
H. S. Newman ◽  
W. Chang
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Capacitive Switches ◽  
Barium Strontium
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