Relationship between plasma parameters and film microstructure in radio frequency magnetron sputter deposition of barium strontium titanate

1998 ◽  
Vol 83 (2) ◽  
pp. 1114-1119 ◽  
Author(s):  
B. Panda ◽  
A. Dhar ◽  
G. D. Nigam ◽  
D. Bhattacharya ◽  
S. K. Ray





2021 ◽  
Vol 413 ◽  
pp. 127098
Author(s):  
Roman A. Surmenev ◽  
Anna A. Ivanova ◽  
Matthias Epple ◽  
Vladimir F. Pichugin ◽  
Maria A. Surmeneva


Vacuum ◽  
1998 ◽  
Vol 51 (4) ◽  
pp. 635-640 ◽  
Author(s):  
C.P Lungu ◽  
M Futsuhara ◽  
O Takai ◽  
M Braic ◽  
G Musa


2009 ◽  
Vol 29 (8) ◽  
pp. 1433-1442 ◽  
Author(s):  
Robert Schafranek ◽  
Andre Giere ◽  
Adam G. Balogh ◽  
Thorsten Enz ◽  
Yuliang Zheng ◽  
...  


2001 ◽  
Vol 16 (9) ◽  
pp. 2680-2686 ◽  
Author(s):  
J. S. Fang ◽  
C. T. Chang ◽  
T. S. Chin

Barium-strontium titanate (BST) thin films were prepared by a two-step deposition using radio-frequency magnetron sputtering on Pt/Ti/SiO2-buffered Si(100) substrate. The initial BST layer thickness and intermediate annealing strongly affect the resultant electric properties of the two-step BST thin films. The optimal two-step BST films, with a first-layer thickness of 30 nm intermediate annealed at 610 °C under 1 torr oxygen. The dielectric breakdown and leakage current density of the two-step film are above 625 kV/cm and 9.5 nA/cm2 at 100 kV/cm, respectively, compared with 400 kV/cm and 17 nA/cm2 for the one-step films. We conclude that the two-step deposition dramatically improves dielectric breakdown and enhances leakage current density while keeping the dielectric constant uninfluenced.



2002 ◽  
Vol 80 (7) ◽  
pp. 1255-1257 ◽  
Author(s):  
S. W. Kirchoefer ◽  
E. J. Cukauskas ◽  
N. S. Barker ◽  
H. S. Newman ◽  
W. Chang


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