Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates
Keyword(s):
2020 ◽
Vol 38
(5)
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pp. 052204
Keyword(s):
2010 ◽
Vol 157
(6)
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pp. H633
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Keyword(s):
Keyword(s):
2019 ◽
Vol 7
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pp. 744-753
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