Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates

Oxide Semiconductor ◽

Chemical Surface ◽

Si Substrates ◽

P Type

Hole effective masses of p-type metal-oxide-semiconductor inversion layer in strained Si1-xGex alloys channel on (110) and (111) Si substrates

Journal of Applied Physics ◽

10.1063/1.3684599 ◽

2012 ◽

Vol 111 (3) ◽

pp. 033712

Author(s):

Shu-Tong Chang ◽

Jun Wei Fan ◽

Chung-Yi Lin ◽

Ta-Chun Cho ◽

Ming Huang

Keyword(s):

Metal Oxide ◽

Inversion Layer ◽

Oxide Semiconductor ◽

Si Substrates ◽

Effective Masses ◽

P Type

Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Applied Physics Express ◽

10.1143/apex.5.014201 ◽

2011 ◽

Vol 5 (1) ◽

pp. 014201 ◽

Cited By ~ 22

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Noriyuki Taoka ◽

Ryo Iida ◽

Sunghoon Lee ◽

...

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Buffer Layers ◽

Oxide Semiconductor ◽

Thin Body ◽

Semiconductor Interface ◽

Si Substrates

Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application

Journal of The Electrochemical Society ◽

10.1149/1.3363736 ◽

2010 ◽

Vol 157 (6) ◽

pp. H633 ◽

Cited By ~ 13

Author(s):

M. Kolahdouz ◽

P. Tabib Zadeh Adibi ◽

A. Afshar Farniya ◽

S. Shayestehaminzadeh ◽

E. Trybom ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Selective Growth ◽

Oxide Semiconductor ◽

P Type

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c036 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C036 ◽

Cited By ~ 5

Author(s):

San-Lein Wu ◽

Chung Yi Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shin-Hsin Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Flicker Noise ◽

Oxide Semiconductor ◽

P Type ◽

Strained Sige

Properties of rapid thermal oxidized p-type germanium and its metal-oxide-semiconductor capacitor structure

Materials Today Proceedings ◽

10.1016/j.matpr.2018.12.070 ◽

2019 ◽

Vol 7 ◽

pp. 744-753 ◽

Cited By ~ 1

Author(s):

Norani Ab Manaf ◽

Abdul Manaf Hashim

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor Capacitor

Oxide Semiconductor ◽

Capacitor Structure ◽

P Type ◽

Correlation between Charge Pumping Method and Direct-Current Current Voltage Method in p-Type Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.4696 ◽

1999 ◽

Vol 38 (Part 1, No. 8) ◽

pp. 4696-4698 ◽

Cited By ~ 6

Author(s):

Bin-Bin Jie ◽

Kok-Hooi Ng ◽

Ming-Fu Li ◽

Keng-Foo Lo

Keyword(s):

Metal Oxide ◽

Direct Current ◽

Field Effect ◽

Oxide Semiconductor ◽

Charge Pumping ◽

Current Voltage ◽

P Type

Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit

Chinese Physics B ◽

10.1088/1674-1056/abcf45 ◽

2020 ◽

Author(s):

Baoxing Duan ◽

Xin Huang ◽

Haitao Song ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

P Type

Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2914364 ◽

2019 ◽

Vol 66 (7) ◽

pp. 3080-3085

Author(s):

L. N. Liu ◽

W. M. Tang ◽

X. D. Huang ◽

J. P. Xu ◽

P. T. Lai

Keyword(s):

Metal Oxide ◽

Surface Passivation ◽

Oxide Semiconductor

Compact Hot-Electron Induced Oxide Trapping Charge and Post-Stress Drain Current Modeling for Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.6200 ◽

2008 ◽

Vol 47 (8) ◽

pp. 6200-6204 ◽

Cited By ~ 1

Author(s):

Chorng-Jye Sheu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Drain Current ◽

Oxide Semiconductor ◽

Hot Electron ◽

Buried Channel ◽

P Type ◽

Post Stress

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors

10.1116/1.1518972 ◽

2002 ◽

Vol 20 (6) ◽

pp. 2288 ◽

Cited By ~ 1

Author(s):

C. S. Chua ◽

E. F. Chor ◽

F. Goh ◽

A. See ◽

L. Chan

Keyword(s):

Metal Oxide ◽

Oxide Semiconductor ◽

P Type