Top-gate hybrid complementary inverters using pentacene and amorphous InGaZnO thin-film transistors with high operational stability

AIP Advances ◽

10.1063/1.3684635 ◽

2012 ◽

Vol 2 (1) ◽

pp. 012134 ◽

Author(s):

J. B. Kim ◽

C. Fuentes-Hernandez ◽

D. K. Hwang ◽

W. J. Potscavage ◽

B. Kippelen

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Operational Stability ◽

Complementary Inverters ◽

Amorphous Ingazno

Download Full-text

Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors

Organic Electronics ◽

10.1016/j.orgel.2010.03.008 ◽

2010 ◽

Vol 11 (6) ◽

pp. 1074-1078 ◽

Author(s):

J.B. Kim ◽

C. Fuentes-Hernandez ◽

S.-J. Kim ◽

S. Choi ◽

B. Kippelen

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

High Gain ◽

Complementary Inverters ◽

Amorphous Ingazno

Download Full-text

Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy

Journal of Applied Physics ◽

10.1063/5.0050111 ◽

2021 ◽

Vol 130 (1) ◽

pp. 015704

Author(s):

Hyunmin Hong ◽

Kwang-Sik Jeong ◽

Jun Hyung Lim ◽

Kyoung Seok Son ◽

Kwun-Bum Chung

Keyword(s):

Thin Film ◽

Quantitative Analysis ◽

Thin Film Transistors ◽

Current Transient ◽

Defect States ◽

Transient Spectroscopy ◽

Amorphous Ingazno

Download Full-text

Interface dependent electrical properties of amorphous InGaZnO[sub 4] thin film transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3058717 ◽

2009 ◽

Vol 27 (1) ◽

pp. 126 ◽

Author(s):

Wantae Lim ◽

Jung Hun Jang ◽

S.-H. Kim ◽

D. P. Norton ◽

V. Craciun ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Amorphous Ingazno

Download Full-text

Above-Threshold $1\!/\!f$ Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise

IEEE Electron Device Letters ◽

10.1109/led.2015.2469723 ◽

2015 ◽

Vol 36 (10) ◽

pp. 1056-1059 ◽

Author(s):

Hongyu He ◽

Xueren Zheng ◽

Shengdong Zhang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Series Resistance ◽

Resistance Noise ◽

Amorphous Ingazno

Download Full-text

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.090205 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 090205 ◽

Author(s):

Runze Zhan ◽

Chengyuan Dong ◽

Bo-Ru Yang ◽

Han-Ping D. Shieh

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Amorphous Ingazno

Download Full-text

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

IEEE Electron Device Letters ◽

10.1109/led.2021.3106273 ◽

2021 ◽

Vol 42 (10) ◽

pp. 1480-1483

Author(s):

Yining Yu ◽

Nannan Lv ◽

Dongli Zhang ◽

Yiran Wei ◽

Mingxiang Wang

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Mobility ◽

Low Temperature Annealing ◽

Amorphous Ingazno

Download Full-text

Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4903527 ◽

2015 ◽

Vol 33 (1) ◽

pp. 011202 ◽

Author(s):

Daeun Lee ◽

Chan-Yong Jeong ◽

Sang-Hun Song ◽

Jin Xiao-Shi ◽

Jong In Kim ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Degradation Behaviors ◽

Amorphous Ingazno

Download Full-text

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Journal of Applied Physics ◽

10.1063/1.4831665 ◽

2013 ◽

Vol 114 (18) ◽

pp. 184502 ◽

Author(s):

A. Tsormpatzoglou ◽

N. A. Hastas ◽

N. Choi ◽

F. Mahmoudabadi ◽

M. K. Hatalis ◽

...

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Amorphous Ingazno

Download Full-text

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

Thin Solid Films ◽

10.1016/j.tsf.2014.02.026 ◽

2014 ◽

Vol 558 ◽

pp. 279-282 ◽

Author(s):

Jae-Sung Kim ◽

Min-Kyu Joo ◽

Ming Xing Piao ◽

Seung-Eon Ahn ◽

Yong-Hee Choi ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Contact Area ◽

Thin Film Transistors ◽

Extended Contact ◽

Amorphous Ingazno

Download Full-text

Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Applied Physics Letters ◽

10.1063/1.4928626 ◽

2015 ◽

Vol 107 (6) ◽

pp. 063504 ◽

Author(s):

Wei Wang ◽

Ling Li ◽

Congyan Lu ◽

Yu Liu ◽

Hangbing Lv ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Thin Film Transistors ◽

Amorphous Ingazno

Download Full-text