Analysis of the contact resistance in amorphous InGaZnO thin film transistors

Applied Physics Letters ◽

10.1063/1.4928626 ◽

2015 ◽

Vol 107 (6) ◽

pp. 063504 ◽

Author(s):

Wei Wang ◽

Ling Li ◽

Congyan Lu ◽

Yu Liu ◽

Hangbing Lv ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Thin Film Transistors ◽

Amorphous Ingazno

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Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Applied Physics Letters ◽

10.1063/1.4958332 ◽

2016 ◽

Vol 109 (2) ◽

pp. 023509 ◽

Author(s):

Zhiheng Han ◽

Guangwei Xu ◽

Wei Wang ◽

Congyan Lu ◽

Nianduan Lu ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Surface Potential ◽

Thin Film Transistors ◽

Kelvin Probe Force Microscopy ◽

Kelvin Probe ◽

Potential Measurement ◽

Force Microscopy ◽

Amorphous Ingazno

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Analysis of the temperature dependent contact resistance in amorphous InGaZnO thin film transistors

2015 28th International Vacuum Nanoelectronics Conference (IVNC) ◽

10.1109/ivnc.2015.7225585 ◽

2015 ◽

Author(s):

Wei Wang ◽

Ling Li ◽

Zhuoyu Ji ◽

Congyan Lu ◽

Yu Liu ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Thin Film Transistors ◽

Temperature Dependent ◽

Amorphous Ingazno

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Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors

Current Applied Physics ◽

10.1016/j.cap.2011.01.017 ◽

2011 ◽

Vol 11 (4) ◽

pp. 1015-1019 ◽

Author(s):

Edward Namkyu Cho ◽

Jung Han Kang ◽

Ilgu Yun

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Thin Film Transistors ◽

Scaling Down ◽

Amorphous Ingazno

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Quantitative analysis of defect states in amorphous InGaZnO thin-film transistors using photoinduced current transient spectroscopy

Journal of Applied Physics ◽

10.1063/5.0050111 ◽

2021 ◽

Vol 130 (1) ◽

pp. 015704

Author(s):

Hyunmin Hong ◽

Kwang-Sik Jeong ◽

Jun Hyung Lim ◽

Kyoung Seok Son ◽

Kwun-Bum Chung

Keyword(s):

Thin Film ◽

Quantitative Analysis ◽

Thin Film Transistors ◽

Current Transient ◽

Defect States ◽

Transient Spectroscopy ◽

Amorphous Ingazno

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Contact resistance corrected-electrical characteristics with channel length effects in π-conjugated small-molecule benzanthracene organic thin film transistors

Synthetic Metals ◽

10.1016/j.synthmet.2020.116670 ◽

2021 ◽

Vol 273 ◽

pp. 116670

Author(s):

Ahmed Al-Ghamdi ◽

W. Boukhili ◽

S. Wageh

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Small Molecule ◽

Thin Film Transistors ◽

Channel Length ◽

Organic Thin Film Transistors ◽

Electrical Characteristics ◽

Organic Thin Film ◽

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Interface dependent electrical properties of amorphous InGaZnO[sub 4] thin film transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3058717 ◽

2009 ◽

Vol 27 (1) ◽

pp. 126 ◽

Author(s):

Wantae Lim ◽

Jung Hun Jang ◽

S.-H. Kim ◽

D. P. Norton ◽

V. Craciun ◽

...

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Thin Film Transistors ◽

Amorphous Ingazno

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Copper source/drain electrode contact resistance effects in amorphous indium-gallium-zinc-oxide thin film transistors

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903225 ◽

2009 ◽

Vol 3 (7-8) ◽

pp. 239-241 ◽

Author(s):

Woong-Sun Kim ◽

Yeon-Keon Moon ◽

Sih Lee ◽

Byung-Woo Kang ◽

Tae-Seok Kwon ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Drain Electrode ◽

Electrode Contact ◽

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Above-Threshold $1\!/\!f$ Noise Expression for Amorphous InGaZnO Thin-Film Transistors Considering Series Resistance Noise

IEEE Electron Device Letters ◽

10.1109/led.2015.2469723 ◽

2015 ◽

Vol 36 (10) ◽

pp. 1056-1059 ◽

Author(s):

Hongyu He ◽

Xueren Zheng ◽

Shengdong Zhang

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Series Resistance ◽

Resistance Noise ◽

Amorphous Ingazno

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Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.090205 ◽

2013 ◽

Vol 52 (9R) ◽

pp. 090205 ◽

Author(s):

Runze Zhan ◽

Chengyuan Dong ◽

Bo-Ru Yang ◽

Han-Ping D. Shieh

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Amorphous Ingazno

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High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

IEEE Electron Device Letters ◽

10.1109/led.2021.3106273 ◽

2021 ◽

Vol 42 (10) ◽

pp. 1480-1483

Author(s):

Yining Yu ◽

Nannan Lv ◽

Dongli Zhang ◽

Yiran Wei ◽

Mingxiang Wang

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

High Mobility ◽

Low Temperature Annealing ◽

Amorphous Ingazno

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