Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.368815 ◽

1998 ◽

Vol 84 (9) ◽

pp. 5277-5282 ◽

Author(s):

Rusli ◽

S. F. Yoon ◽

H. Yang ◽

J. Ahn ◽

Q. Zhang ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Hydrocarbon Films ◽

Process Pressure ◽

Dc Bias ◽

Resonance Plasma

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Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.349264 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3301-3313 ◽

Author(s):

D. A. Carl ◽

D. W. Hess ◽

M. A. Lieberman ◽

T. D. Nguyen ◽

R. Gronsky

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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DC Bias Method for a-Si:H Deposition on a Dielectric Substrate Using Electron Cyclotron Resonance Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.1801 ◽

1990 ◽

Vol 29 (Part 1, No. 9) ◽

pp. 1801-1802 ◽

Author(s):

Yoshikazu Nakayama ◽

Mitsuru Kondoh ◽

Kohji Hitsuishi ◽

Takao Kawamura

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Dielectric Substrate ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Effect of negative dc bias voltage on mechanical property ofa‐C:H films deposited in electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.360321 ◽

1995 ◽

Vol 78 (2) ◽

pp. 1394-1396 ◽

Author(s):

Kiichiro Kamata ◽

Tohru Inoue ◽

Ken‐ichi Sugai ◽

Hidetoshi Saitoh ◽

Kazunori Maruyama

Keyword(s):

Mechanical Property ◽

Bias Voltage ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2834 ◽

2000 ◽

Vol 39 (Part 1, No. 5A) ◽

pp. 2834-2838 ◽

Author(s):

Junsi Gao ◽

Hiroshi Nakashima ◽

Junli Wang ◽

Kanako Iwanaga ◽

Hideharu Nakashima ◽

...

Keyword(s):

Epitaxial Growth ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Discharge Condition ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Sputtering ◽

Dc Bias ◽

Resonance Plasma

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Electron cyclotron resonance plasma etching of InP in CH4/H2/Ar

Applied Physics Letters ◽

10.1063/1.102487 ◽

1990 ◽

Vol 56 (15) ◽

pp. 1424-1426 ◽

Author(s):

S. J. Pearton ◽

U. K. Chakrabarti ◽

A. P. Kinsella ◽

D. Johnson ◽

C. Constantine

Keyword(s):

Plasma Etching ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Effect of nitrogen flow on the properties of carbon nitride films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Vacuum ◽

10.1016/j.vacuum.2021.110223 ◽

2021 ◽

pp. 110223

Author(s):

Sixu Lin ◽

Dong Xie ◽

Yongliang Tang ◽

Yiwen Wang ◽

Fengjuan Jing ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Carbon Nitride ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Nitrogen Flow ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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X-ray photoelectron diffraction observation of β-SiC(001) obtained by electron cyclotron resonance plasma assisted growth on Si(001)

Applied Surface Science ◽

10.1016/0169-4332(93)90239-8 ◽

1993 ◽

Vol 68 (4) ◽

pp. 575-582 ◽

Author(s):

M. Diani ◽

J.L. Bischoff ◽

L. Kubler ◽

D. Bolmont

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

X Ray ◽

Photoelectron Diffraction ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Deposition of high‐quality TiN using tetra‐isopropoxide titanium in an electron cyclotron resonance plasma process

Applied Physics Letters ◽

10.1063/1.114847 ◽

1995 ◽

Vol 67 (20) ◽

pp. 2934-2935 ◽

Author(s):

A. Weber ◽

R. Poeckelmann ◽

C.‐P. Klages

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Process ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-damage electron-beam-assisted dry etching of GaAs and AlGaAs using electron cyclotron resonance plasma electron source

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586892 ◽

1993 ◽

Vol 11 (6) ◽

pp. 2288 ◽

Author(s):

Heiji Watanabe

Keyword(s):

Electron Beam ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Dry Etching ◽

Plasma Electron ◽

Electron Source ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Electron Source ◽

Resonance Plasma

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