Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.349264 ◽

1991 ◽

Vol 70 (6) ◽

pp. 3301-3313 ◽

Author(s):

D. A. Carl ◽

D. W. Hess ◽

M. A. Lieberman ◽

T. D. Nguyen ◽

R. Gronsky

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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Electrical properties of electron cyclotron resonance plasma-deposited silicon dioxide: effect of the oxygen to silane flow ratio

Semiconductor Science and Technology ◽

10.1088/0268-1242/11/3/023 ◽

1996 ◽

Vol 11 (3) ◽

pp. 422-426 ◽

Author(s):

M J Hernandez ◽

J Garrido ◽

J Martinez ◽

J Piqueras

Keyword(s):

Electrical Properties ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580664 ◽

1997 ◽

Vol 15 (4) ◽

pp. 1951-1954 ◽

Author(s):

H. Nakashima ◽

K. Furukawa ◽

Y. C. Liu ◽

D. W. Gao ◽

Y. Kashiwazaki ◽

...

Keyword(s):

Low Temperature ◽

Silicon Dioxide ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

High Quality ◽

Electron Cyclotron Resonance Plasma ◽

Low Temperature Deposition ◽

Temperature Deposition ◽

Resonance Plasma

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Structural and electrical properties of thin microcrystalline silicon films deposited by an electron cyclotron resonance plasma discharge of 2% SiH4/Ar further diluted in H2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.581481 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2751-2756 ◽

Author(s):

B. B. Jagannathan ◽

R. L. Wallace ◽

W. A. Anderson

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Plasma Discharge ◽

Electron Cyclotron ◽

Silicon Films ◽

Microcrystalline Silicon ◽

Electron Cyclotron Resonance Plasma ◽

Structural And Electrical Properties ◽

Resonance Plasma

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Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588003 ◽

1995 ◽

Vol 13 (1) ◽

pp. 118 ◽

Author(s):

K. L. Seaward

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Dioxide ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical properties of GaAs selectively grown by electron cyclotron resonance plasma‐excited molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.105221 ◽

1991 ◽

Vol 58 (6) ◽

pp. 604-606 ◽

Author(s):

Norio Yamamoto ◽

Naoto Kondo ◽

Yasushi Nanishi

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Cyclotron Resonance ◽

Molecular Beam ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.7351 ◽

2006 ◽

Vol 45 (9B) ◽

pp. 7351-7353 ◽

Author(s):

Yukio Fukuda ◽

Koji Kato ◽

Hiroshi Toyota ◽

Toshiro Ono ◽

Yoshitaka Nagasato ◽

...

Keyword(s):

Electrical Properties ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Plasma Oxidation ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical properties of low-temperature epitaxial doped Si thin films fabricated by using a sputtering-type electron cyclotron resonance plasma

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/34/7/301 ◽

2001 ◽

Vol 34 (7) ◽

pp. 1025-1031

Author(s):

Junli Wang ◽

Hiroshi Nakashima ◽

Junsi Gao ◽

Katsunori Muraoka

Keyword(s):

Electrical Properties ◽

Low Temperature ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

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Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods

Korean Journal of Materials Research ◽

10.3740/mrsk.2017.27.6.295 ◽

2017 ◽

Vol 27 (6) ◽

pp. 295-300

Author(s):

Dae-Gyu Yang ◽

◽

Yang-Soo Kim ◽

Jong-Heon Kim ◽

Hyoung-Do Kim ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Atomic Layer ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Layer Deposition ◽

Al2o3 Films ◽

Resonance Plasma

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Influence of process pressure on the growth of hydrocarbon films under direct dc bias in an electron cyclotron resonance plasma

Journal of Applied Physics ◽

10.1063/1.368815 ◽

1998 ◽

Vol 84 (9) ◽

pp. 5277-5282 ◽

Author(s):

Rusli ◽

S. F. Yoon ◽

H. Yang ◽

J. Ahn ◽

Q. Zhang ◽

...

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Hydrocarbon Films ◽

Process Pressure ◽

Dc Bias ◽

Resonance Plasma

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DC Bias Method for a-Si:H Deposition on a Dielectric Substrate Using Electron Cyclotron Resonance Plasma

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.1801 ◽

1990 ◽

Vol 29 (Part 1, No. 9) ◽

pp. 1801-1802 ◽

Author(s):

Yoshikazu Nakayama ◽

Mitsuru Kondoh ◽

Kohji Hitsuishi ◽

Takao Kawamura

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron Resonance ◽

Dielectric Substrate ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Dc Bias ◽

Resonance Plasma

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