Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

1999 ◽  
Vol 86 (4) ◽  
pp. 2073-2077 ◽  
Author(s):  
J. C. Burton ◽  
F. H. Long ◽  
I. T. Ferguson
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
Electronic Raman Scattering ◽  
Resonance Enhancement ◽  
Defect Levels

Electronic Raman Studies of Shallow Donors in Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 579-584 ◽  
Author(s):  
Roland Püsche ◽  
Martin Hundhausen ◽  
Lothar Ley ◽  
Kurt Semmelroth ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
Ground State ◽  
Electronic Transitions ◽  
Nitrogen And Phosphorus ◽  
Nitrogen Doped ◽  
Electronic Raman Scattering ◽  
Doped Silicon ◽  
Donor States ◽  
Increasing Temperature

We study electronic Raman scattering of phosphorus and nitrogen doped silicon carbide (SiC) as a function of temperature in the range 7K < T < 300K. We observe a series of peaks in the Raman spectra which we assign to electronic transitions at nitrogen and phosphorus donors on different lattice sites. These transitions are identified as valley orbit transitions of the 1s donor ground state. From the polarization dependence of the observed peaks, we find that all electronic Raman signals have E2-symmetry of C6v for the hexagonal polytypes (6H-SiC and 4H-SiC) and E-symmetry of C3v for 15R-SiC. We find a reduction of the intensities of all valley-orbit Raman signals with increasing temperature and ascribe this reduction to the decreasing occupation of donor states.

Optical Characterization of SiC Wafers

1999 ◽  
Vol 572 ◽  
Author(s):  
J. C. Burton ◽  
M. Pophristic ◽  
F. H. Long ◽  
I. Ferguson
Keyword(s):  
Raman Spectroscopy ◽  
Raman Scattering ◽  
Laser Wavelength ◽  
Time Resolved ◽  
Near Ir ◽  
Electronic Raman Scattering ◽  
Defect Levels ◽  
Sic Wafer ◽  
Time Resolved Photoluminescence

ABSTRACTRaman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The two-phonon Raman spectra from both 4H- and 6H-SiC have been measured and found to be polytype dependent, consistent with changes in the vibrational density of states. We have observed electronic Raman scattering from nitrogen defect levels in both 4H- and 6H-SiC at room temperature. We have found that electronic Raman scattering from the nitrogen defect levels is significantly enhanced with excitation by red or near IR laser light. These results demonstrate that the laser wavelength is a key parameter in the characterization of SiC by Raman scattering. These results suggest that Raman spectroscopy can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation. We also present results on time-resolved photoluminescence spectra of n-type SiC wafers.

scholarly journals Electronic Raman Scattering in Suspended Semiconducting Carbon Nanotube

2020 ◽  
Vol 11 (24) ◽  
pp. 10497-10503
Author(s):  
Yuecong Hu ◽  
Shaochuang Chen ◽  
Xin Cong ◽  
Sida Sun ◽  
Jiang-bin Wu ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Raman Scattering ◽  
Electronic Raman Scattering

Electronic Raman scattering in

1986 ◽  
Vol 126 ◽  
pp. 302 ◽  
Author(s):  
G.M. Williams ◽  
P.C. Becker ◽  
J.G. Conway ◽  
N. Edelstein ◽  
M.M. Abraham ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Electronic Raman Scattering

scholarly journals Observation of Electronic Raman Scattering in Metallic Carbon Nanotubes

2011 ◽  
Vol 107 (15) ◽  
Author(s):  
H. Farhat ◽  
S. Berciaud ◽  
M. Kalbac ◽  
R. Saito ◽  
T. F. Heinz ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Raman Scattering ◽  
Electronic Raman Scattering

MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

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