MeV Self Ion Beam Induced Amorphisation of Silicon Carbide Surfaces and Its Effect on Their Trdbomechanical Propertdzs

1991 ◽  
Vol 235 ◽  
Author(s):  
D. K. Sood ◽  
V. C. Nath ◽  
Yang Xi
Keyword(s):  
Silicon Carbide ◽  
Raman Scattering ◽  
High Precision ◽  
Friction And Wear ◽  
Ion Beam ◽  
Steel Ball ◽  
Carbon Ions ◽  
Ion Energy ◽  
Number Of Cycles ◽  
Tribomechanical Properties

ABSTRACTAmorphisation of sintered SiC by bombardment with self (C, Si) ions has been studied. Ion doses ranged from 1×1015 to 1×1017 ions/cm2; and ion energy was varied from 0.09 to 5 MeV. Amorphisation was detected by micro-focus Raman scattering. Tribomechanical properties-friction and wear were studied with a high precision pin (steel ball) and disc (implanted) machine. Results show substantial improvements in friction and wear, which persist to a large number of cycles. Tribomechanical properties are shown to correlate with surface amorphisation and carburisation. Carbon ions are found to be much more effective than Si ions (with similar damage distributions) in reducing friction and wear.

Ion Beam Synthesis of Silicon Carbide

2005 ◽  
Vol 107 ◽  
pp. 51-54 ◽  
Author(s):  
S. Intarasiri ◽  
Anders Hallén ◽  
A. Razpet ◽  
Somsorn Singkarat ◽  
G. Possnert
Keyword(s):  
Silicon Carbide ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Vacuum Furnace ◽  
Carbon Ions ◽  
Elastic Recoil ◽  
Near Surface ◽  
Ion Beam Synthesis

Formation and crystallization of a thin near-surface layer of silicon carbide on a silicon substrate, created by ion-beam synthesis (IBS), are discussed. 80 and 40 keV carbon ions were implanted into a (1 0 0) high-purity p-type silicon substrate at room temperature and 400 oC, respectively, using doses in excess of 1017 ions/cm2. Elastic recoil detection analysis (ERDA) technique, developed for routine atomic depth profiling at the Angstrom laboratory, Uppsala University, Sweden, was used to investigate the depth distributions of implanted-ions. Infrared transmittance measurement was used as an indication of SiC in the implanted Si substrate. For the samples implanted at high temperature, the results show the existence of a peak at 797 cm-1, indicating the presence of β-SiC, already directly formed during the implantation without postimplantation annealing. While for the samples implanted at room temperature, starting with the band of amorphous Si-C network, the crystalline SiC appears at the annealing temperature as low as 900 oC. In both cases, during further annealing in vacuum, the peak grows in height and narrows in width (according to the measured FWHM) with increasing annealing temperature, indicating a further growth of the SiC layer. However, for thermal annealing at 1000 oC in a vacuum furnace the SiC crystallization was not completed and crystal imperfection where still present. Complementary to IR, Raman scattering measurements were performed. Although no direct evidence of SiC vibrations were observed, the appearance and disappearance of both Si-Si and C-C related bands points out to the formation of silicon and carbon clusters in the implanted layer.

Study of Diamond Nucleation on Silicon Using Direct Negative Carbon Ion Beam Source

1995 ◽  
Vol 396 ◽  
Author(s):  
Y.W. Ko ◽  
Y.O. Ahn ◽  
M.H. Sohn ◽  
Y. Park ◽  
S.I. Kim
Keyword(s):  
Silicon Carbide ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Ion Source ◽  
Silicon Substrates ◽  
Carbon Ions ◽  
Carbon Ion ◽  
Initial Stage ◽  
Initial Nucleation ◽  
Carbon Ion Beam

AbstractThe initial nucleation stages of sp3 bonded amorphous diamond on silicon substrates have been investigated. The energy of the incident carbon ions/atoms is understood as a key parameter for the vapor phase formation of amorphous diamond like carbon coatings. SKION's solid state carbon ion source is used for this study. The ion source is UHV compatible and capable of producing a controlled energy ion beam in the energy range of 5-300 eV. In the initial stage of the deposition, carbon is found to be deposited as a silicon carbide up to a thickness of about 180Á at room temperature. Silicon is diffused to the surface and forms SiC. As the energy of the ion beam increases, the formation of silicon carbide becomes apparent. Further carbon ion bombardment then leads to the formation of an sp3 bonded amorphous diamond film. Post-annealing above 900°C leads to the formation of crystalline silicon resulting in a Si-rich SiC surface due to silicon out-diffusion.

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

FIB Micromachining and Nano-Structure Fabrication

1999 ◽  
Author(s):  
Raymond A. Lee ◽  
Patrick J. Wolpert
Keyword(s):  
High Precision ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Biological Applications ◽  
Optical Lens ◽  
Nano Structure ◽  
Beam System ◽  
Afm Tips ◽  
Established Technique ◽  
Made In

Abstract FIB Micromachining has long been an established technique, but until recently it has been overshadowed by the more mainstream semiconductor application of the Focused Ion Beam system. Nano- Structure fabrication using the FIB system has become more popular recently due to several factors. The need for sub-micron structures have grown significantly due to a need for enhanced optical and biological applications. Another reason for the growth in micromachining is the improvement made in the ability of FIB systems to produce geometric shapes with high precision. With the latest high-end FIB systems, it is possible to produce microstructures with tens of nano-meters of precision. Optical lens, AFM tips, and nano-apertures are all part of the growing application for FIB Micromachining. This paper will discuss the ability and limitations of the FIB system and some possible application for FIB Micromachining.

Friction and Wear Behaviors of Steel Ball Against Polyimide-PTFE Composite Under Rolling-Sliding Motion

2021 ◽  
Vol 69 (3) ◽  
Author(s):  
Yuanyuan Jiang ◽  
Lei Chen ◽  
Chen Xiao ◽  
Ningning Zhou ◽  
Tao Qing ◽  
...  
Keyword(s):  
Friction And Wear ◽  
Steel Ball ◽  
Ptfe Composite ◽  
Sliding Motion

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Large Area Surface Treatment by Ion Beam Technology

1996 ◽  
Vol 438 ◽  
Author(s):  
R. L. C. Wu ◽  
W. Lanter
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Polycrystalline Diamond ◽  
Carbon Films ◽  
Ultra High Vacuum ◽  
Diamond Like Carbon ◽  
Chemical Compositions ◽  
Rf Power ◽  
Large Area ◽  
Ion Energy

AbstractAn ultra high vacuum ion beam system, consisting of a 20 cm diameter Rf excilted (13.56 MHz) ion gun and a four-axis substrate scanner, has been used to modify large surfaces (up to 1000 cm2) of various materials, including; infrared windows, silicon nitride, polycrystalline diamond, 304 and 316 stainless steels, 440C and M50 steels, aluminum alloys, and polycarbonates; by depositing different chemical compositions of diamond-like carbon films. The influences of ion energy, Rf power, gas composition (H2/CH4 , Ar/CH4 and O2/CH4/H2), on the diamond-like carbon characteristics has been studied. Particular attention was focused on adhesion, environmental effects, IR(3–12 μm) transmission, coefficient of friction, and wear factors under spacelike environments of diamond-like carbon films on various substrates. A quadrupole mass spectrometer was utilized to monitor the ion beam composition for quality control and process optimization.

Medium ion energy synthesis of hard elastic fullerene-like hydrogenated carbon film with ultra-low friction and wear in humid air

2015 ◽  
Vol 143 ◽  
pp. 188-190 ◽  
Author(s):  
Yongfu Wang ◽  
Junmeng Guo ◽  
Jun Zhao ◽  
Delei Ding ◽  
Yongyong He ◽  
...  
Keyword(s):  
Friction And Wear ◽  
Carbon Film ◽  
Low Friction ◽  
Humid Air ◽  
Ion Energy ◽  
Energy Synthesis

Materials characterization and effect of purity and ion implantation on the friction and wear of sublimed fullerene films

1994 ◽  
Vol 9 (11) ◽  
pp. 2823-2838 ◽  
Author(s):  
B.K. Gupta ◽  
Bharat Bhushan ◽  
C. Capp ◽  
J.V. Coe
Keyword(s):  
Fourier Transform ◽  
Elastic Modulus ◽  
Ion Implantation ◽  
Coefficient Of Friction ◽  
Friction And Wear ◽  
Steel Ball ◽  
Scanning Tunneling ◽  
High Dose ◽  
Wear Life ◽  
Plastic Deformation Behavior

In previous studies, sublimed C60-rich fullerene films on silicon, when slid against a 52100 steel ball under dry conditions, have exhibited low coefficient of friction (∼0.12). Films with different purities can be produced by sublimation at different substrate temperatures. In this paper, effects of purity of fullerene films and ion implantation of the films with Ar ions on the friction and wear properties of sublimed fullerene films are reported. C60-rich films (called here films with high purity) exhibit low macroscale friction. An increased amount of C70 and impurities in the fullerene film determined using Raman and Fourier transform infrared (FTIR), increases its coefficient of friction. Microscale friction measurements using friction force microscopy also exhibited similar trends. Low coefficient of friction of sublimed C60-rich films on silicon is probably due to the formation of a tenacious transfer film of C60 molecules on the mating 52100 steel ball surface. Based on scanning tunneling microscopy (STM), transmission electron microscopy (TEM), and high resolution TEM (HRTEM), we found that fullerene films primarily consisted of C60 molecules in a fcc lattice structure. Nanoindenter was used to measure hardness and elastic modulus of the as-deposited films. Ion-implantation with 1 × 1016 Ar+ cm−2 reduced macroscale friction down to about 0.10 from 0.12 with an increase in wear life by a factor of 4; however, doses of 5 × 1016 ions cm−2 gave three times higher friction and poorer wear life; higher doses disintegrated the C60 molecules. Based on STM, TEM, Raman, FTIR, and laser desorption Fourier-transform ion cyclotron resonance mass spectrometer (LD/FT/ICR) studies, we found that the ion implantation with a dose of 1 × 1016 Ar+ cm−2 resulted in smoothening of the fullerene film surface probably by compacting clusters, but without disintegrating the C60 molecules. However, a high dose of 5 × 1016 Ar+ cm−2 damaged the C60 molecules, converting it to an amorphous carbon. Nanoindentation studies show that ion implantation with a dose of 1 × 1016 Ar+ cm−2 resulted in an increase in the hardness from about 1.2 to 4.0 GPa and in elastic modulus from about 70 to 75 GPa and modified the elastic-plastic deformation behavior.

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