Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates

1991 ◽  
Author(s):  
J. M. Arias ◽  
M. Zandian ◽  
S. H. Shin ◽  
W. V. McLevige ◽  
J. G. Pasko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Density Reduction ◽  
Gaas Substrates ◽  
Hgcdte Epilayers

scholarly journals Исследование разупорядочения в твердых растворах теллуридов кадмия-ртути оптическими методами

2019 ◽  
Vol 45 (11) ◽  
pp. 24
Author(s):  
В.И. Иванов-Омский ◽  
К.Д. Мынбаев ◽  
И.Н. Трапезникова ◽  
Д.А. Андрющенко ◽  
Н.Л. Баженов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cadmium Telluride ◽  
Thermal Annealing ◽  
Mercury Cadmium Telluride ◽  
Optical Transmission ◽  
Molecular Beam ◽  
Substantial Decrease ◽  
Gaas Substrates

Optical transmission and photoluminescence have been used for the studies of disorder in the films of mercury cadmium telluride alloys grown by molecular-beam epitaxy (MBE) on Si and GaAs substrates. The effect of substantial decrease of the disorder as a result of thermal annealing is discussed as well as possible relation of the disorder to defects typical of the material grown by MBE.

Comparison of the GaAs Layers Grown on Porous Si and on Si by Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
B.J. Wu ◽  
K.L. Wang ◽  
Y.J. Mii ◽  
Y.S. Yoon ◽  
A.T. Wu ◽  
...  
Keyword(s):  
Residual Stress ◽  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Porous Si ◽  
Si Substrate ◽  
Si Substrates

AbstractGaAs layers have been successfully grown on tilted (100) Si as well as porous Si substrates by molecular beam epitaxy(MBE). Rapid thermal annealing and vacuum thermal annealing have been used to further improve the quality of the epitaxial layers. We observed that the dislocation density near the interface of the heterostructure is higher for GaAs on Si substrate. Both annealing processes are proven to be useful in improving layer quality, while the vacuum thermal annealing seemed to be more effective in minimizing the residual stress.

Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

1997 ◽  
Vol 485 ◽  
Author(s):  
B. H. Tseng ◽  
S. B. Lin ◽  
D. J. Yang
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Luminescence Properties ◽  
High Quality ◽  
Film Composition ◽  
Exciton Emission ◽  
Gaas Substrates

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Gaas Substrates ◽  
Different Temperatures

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 181-186 ◽  
Author(s):  
G.X. Shi ◽  
P. Jin ◽  
B. Xu ◽  
C.M. Li ◽  
C.X. Cui ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Annealing Effect
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