Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

Jonathan Avner Rothschild; Aya Cohen; Anna Brusilovsky; Lior Kornblum; Yaron Kauffmann; Yaron Amouyal; Moshe Eizenberg

doi:10.1063/1.4730618

Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.4730618 ◽

2012 ◽

Vol 112 (1) ◽

pp. 013717 ◽

Cited By ~ 10

Author(s):

Jonathan Avner Rothschild ◽

Aya Cohen ◽

Anna Brusilovsky ◽

Lior Kornblum ◽

Yaron Kauffmann ◽

...

Keyword(s):

Metal Oxide ◽

Fermi Level ◽

Semiconductor Devices ◽

Alloy System ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Ni Alloy

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Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N2O

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.l968 ◽

1996 ◽

Vol 35 (Part 2, No. 8A) ◽

pp. L968-L970 ◽

Cited By ~ 4

Author(s):

Kuei-Shu Chang-Liao ◽

Tang-Yuan Lan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Electron ◽

Gate Electrode ◽

Amorphous Si

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Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2892045 ◽

2008 ◽

Vol 92 (10) ◽

pp. 102901 ◽

Cited By ~ 12

Author(s):

Yong-Mu Kim ◽

Jang-Sik Lee

Keyword(s):

Thin Films ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Work Functions

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Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devices

Surface and Interface Analysis ◽

10.1002/sia.4969 ◽

2012 ◽

Vol 44 (11-12) ◽

pp. 1436-1439

Author(s):

S. V. Jagadeesh Chandra ◽

Woong-Ki Hong ◽

Jin-Sung Kim ◽

Hyobong Hong ◽

Chel-Jong Choi

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effective Work ◽

Effective Work Function

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Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications

Applied Physics Letters ◽

10.1063/1.2472531 ◽

2007 ◽

Vol 90 (6) ◽

pp. 062114 ◽

Cited By ~ 16

Author(s):

Chin-Lung Cheng ◽

Chien-Wei Liu ◽

Jin-Tsong Jeng

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Metal Gate ◽

Work Function Tuning

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Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices

Thin Solid Films ◽

10.1016/j.tsf.2011.10.137 ◽

2012 ◽

Vol 520 (14) ◽

pp. 4556-4558 ◽

Cited By ~ 8

Author(s):

S. V. Jagadeesh Chandra ◽

E. Fortunato ◽

R. Martins ◽

Chel-Jong Choi

Keyword(s):

Metal Oxide ◽

Work Function ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Effective Work ◽

Effective Work Function

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InGaAs metal-oxide-semiconductor FETs with self-aligned Ni-Alloy source/drain

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2015.7224414 ◽

2015 ◽

Author(s):

Shin-Yuan Wang ◽

Chao-Hsin Chien ◽

Jin-Ju Lin ◽

Chun-Yen Chang

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ni Alloy

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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