Effects of post metallization annealing on modulation in effective work function of platinum gate electrode in germanium metal-oxide-semiconductor devices

2012 ◽  
Vol 44 (11-12) ◽  
pp. 1436-1439
Author(s):  
S. V. Jagadeesh Chandra ◽  
Woong-Ki Hong ◽  
Jin-Sung Kim ◽  
Hyobong Hong ◽  
Chel-Jong Choi
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Effective Work ◽  
Effective Work Function

Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices

2012 ◽  
Vol 520 (14) ◽  
pp. 4556-4558 ◽  
Author(s):  
S. V. Jagadeesh Chandra ◽  
E. Fortunato ◽  
R. Martins ◽  
Chel-Jong Choi
Keyword(s):  
Metal Oxide ◽  
Work Function ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Effective Work ◽  
Effective Work Function

Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

2012 ◽  
Vol 112 (1) ◽  
pp. 013717 ◽  
Author(s):  
Jonathan Avner Rothschild ◽  
Aya Cohen ◽  
Anna Brusilovsky ◽  
Lior Kornblum ◽  
Yaron Kauffmann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Fermi Level ◽  
Semiconductor Devices ◽  
Alloy System ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Electrode ◽  
Ni Alloy
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