scholarly journals Assessment of high-frequency performance limits of graphene field-effect transistors

Nano Research ◽  
2011 ◽  
Vol 4 (6) ◽  
pp. 571-579 ◽  
Author(s):  
Jyotsna Chauhan ◽  
Jing Guo
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Performance Limits ◽  
High Frequency Performance

scholarly journals Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

2020 ◽  
Vol 2 (9) ◽  
pp. 4179-4186 ◽  
Author(s):  
Pedro C. Feijoo ◽  
Francisco Pasadas ◽  
Marlene Bonmann ◽  
Muhammad Asad ◽  
Xinxin Yang ◽  
...  
Keyword(s):  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Drift Diffusion Model ◽  
Drift Diffusion ◽  
Velocity Saturation ◽  
Self Heating ◽  
Heating Effects ◽  
Carrier Velocity ◽  
High Frequency Performance

A drift–diffusion model including self-heating effects in graphene transistors to investigate carrier velocity saturation for optimal high frequency performance.

scholarly journals High-frequency performance of scaled carbon nanotube array field-effect transistors

2012 ◽  
Vol 101 (5) ◽  
pp. 053123 ◽  
Author(s):  
Mathias Steiner ◽  
Michael Engel ◽  
Yu-Ming Lin ◽  
Yanqing Wu ◽  
Keith Jenkins ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Nanotube Array ◽  
Carbon Nanotube Array ◽  
High Frequency Performance

scholarly journals Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer

2010 ◽  
Vol 96 (21) ◽  
pp. 213515 ◽  
Author(s):  
Younggun Han ◽  
Masaaki Koganemaru ◽  
Toru Ikeda ◽  
Noriyuki Miyazaki ◽  
Woon Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Mechanical Stress ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Frequency Performance ◽  
Si Wafer

scholarly journals Improving the RF Performance of Carbon Nanotube Field Effect Transistor

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
S. Hamieh
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Parasitic Capacitance ◽  
Transistor Channel ◽  
Performance Limit ◽  
Rf Performance ◽  
High Frequency Performance

Compact model of single-walled semiconducting carbon nanotube field-effect transistors (CNTFETs) implementing the calculation of energy conduction subband minima under VHDLAMS simulator is used to explore the high-frequency performance potential of CNTFET. The cutoff frequency expected for a MOSFET-like CNTFET is well below the performance limit, due to the large parasitic capacitance between electrodes. We show that using an array of parallel nanotubes as the transistor channel combined in a finger geometry to produce a single transistor significantly reduces the parasitic capacitance per tube and, thereby, improves high-frequency performance.

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