Monte Carlo simulation of charge transport in disordered organic thin films: Applicability of Meyer-Neldel rule for extracting energetic disorder

2013 ◽  
Author(s):  
S. Raj Mohan ◽  
Manoranjan P. Singh ◽  
M. P. Joshi ◽  
L. M. Kukreja
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Charge Transport ◽  
Organic Thin Films ◽  
Energetic Disorder

scholarly journals Monte Carlo Simulation of Carrier Diffusion in Organic Thin Films with Morphological Inhomogeneity

2013 ◽  
Vol 117 (47) ◽  
pp. 24663-24672 ◽  
Author(s):  
S. Raj Mohan ◽  
Manoranjan P. Singh ◽  
M. P. Joshi ◽  
L. M. Kukreja
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Organic Thin Films ◽  
Carrier Diffusion

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

scholarly journals Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Transport Mechanism ◽  
Copper Phthalocyanine ◽  
Organic Thin Films ◽  
Interface States ◽  
Charge Transport Mechanism ◽  
Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

Microstructure Engineering of Binary Alloy Thin Films through Monte Carlo Simulation of Pt/Al Thin-film Precipitate-evolution

2015 ◽  
Vol 2 (7) ◽  
pp. 4100-4110
Author(s):  
Richard Harris ◽  
Jacobus Terblans ◽  
Hendrik Swart
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Binary Alloy ◽  
Al Thin Film ◽  
Precipitate Evolution

Transition from island to layer growth of thin films: A Monte Carlo simulation

1977 ◽  
Vol 40 (1) ◽  
pp. 47-58 ◽  
Author(s):  
D. Kashchiev ◽  
J.P. van der Eerden ◽  
C. van Leeuwen
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Layer Growth

Monte Carlo Simulation of Sculptured Thin Films Growth of SiO 2 on Si for Applications

2008 ◽  
Vol 25 (12) ◽  
pp. 4456-4458 ◽  
Author(s):  
Jiang Shao-Ji ◽  
Yu Meng-Ying ◽  
Wei Yu-Wei ◽  
Tang Ji-Jia
Keyword(s):  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Sculptured Thin Films

scholarly journals Monte Carlo simulation of charge transport in disordered organic systems using buffer lattice at the boundary

Pramana ◽  
2019 ◽  
Vol 93 (1) ◽  
Author(s):  
S Raj Mohan ◽  
Manoranjan P Singh ◽  
M P Joshi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Charge Transport ◽  
Organic Systems

Theoretical study of synergetic effect between halogenation and pyrazine substitutions on transport properties of silylethynylated pentacene

2019 ◽  
Vol 43 (8) ◽  
pp. 3583-3600 ◽  
Author(s):  
Jian-Xun Fan ◽  
Li-Fei Ji ◽  
Ning-Xi Zhang ◽  
Pan-Pan Lin ◽  
Gui-Ya Qin ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Charge Transport ◽  
Transport Properties ◽  
Quantum Tunneling ◽  
Theoretical Study ◽  
Kinetic Monte Carlo ◽  
Synergetic Effect ◽  
Tunneling Effect ◽  
Disorder Effects

Combining quantum-tunneling-effect-enabled hopping theory with kinetic Monte Carlo simulation and dynamic disorder effects, the charge transport properties of a series of N-hetero 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) derivatives with halogen substitutions were studied.

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