Transition of electron transport process in Be-doped low-temperature-grown GaAs layer

AbstractThe lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

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Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Semiconductors ◽

10.1134/s1063782616110154 ◽

2016 ◽

Vol 50 (11) ◽

pp. 1499-1505 ◽

Cited By ~ 3

Author(s):

A. N. Kosarev ◽

V. V. Chaldyshev ◽

V. V. Preobrazhenskii ◽

M. A. Putyato ◽

B. R. Semyagin

Keyword(s):

Low Temperature ◽

Quantum Dot ◽

Gaas Layer ◽

Inas Quantum Dot ◽

Low Temperature Grown Gaas

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Subpicosecond Carrier Lifetime in Low-Temperature-Grown GaAs Layer on (311)-Oriented Substrate

10.7567/ssdm.1995.d-2-3 ◽

1995 ◽

Author(s):

T. M. Cheng ◽

C. Y. Chang ◽

G. R. Lin ◽

F. Ganikhanov ◽

C. L. Pan ◽

...

Keyword(s):

Low Temperature ◽

Carrier Lifetime ◽

Gaas Layer ◽

Low Temperature Grown Gaas

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Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs

MRS Proceedings ◽

10.1557/proc-448-3 ◽

1996 ◽

Vol 448 ◽

Cited By ~ 1

Author(s):

D.B. Janes ◽

S. Hong ◽

V. R. Kolagunta ◽

D. McInturff ◽

T.-B. NG ◽

...

Keyword(s):

Low Temperature ◽

Photoelectron Spectroscopy ◽

Field Effect Transistors ◽

Layer Structure ◽

Gaas Layer ◽

Scanning Tunneling Spectroscopy ◽

Scanning Tunneling ◽

Semiconductor Surface ◽

Low Resistance ◽

Low Temperature Grown Gaas

AbstractThe chemical stability of a GaAs layer structure consisting of a thin (10 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a heavily n-doped GaAs layer, both grown by molecular beam epitaxy, is described. Scanning tunneling spectroscopy and X-ray photoelectron spectroscopy performed after atmospheric exposure indicate that the LTG:GaAs surface layer oxidizes much less rapidly than comparable layers of stoichiometric GaAs. There is also evidence that the terminal oxide thickness is smaller than that of stoichiometric GaAs. The spectroscopy results are used to confirm a model for conduction in low resistance, nonalloyed contacts employing comparable layer structures. The inhibited surface oxidation rate is attributed to the bulk Fermi level pinning and the low minority carrier lifetime in unannealed LTG:GaAs. Device applications including low-resistance cap layers for field-effect transistors are described.

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