Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy

1999 ◽  
Vol 43 (8) ◽  
pp. 1547-1553 ◽  
Author(s):  
K Matsunami ◽  
T Takeyama ◽  
T Usunami ◽  
S Kishimoto ◽  
K Maezawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gaas Layer ◽  
Kelvin Probe Force Microscopy ◽  
Potential Profile ◽  
Profile Measurement ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Low Temperature Grown Gaas

Si Single-Electron SOI-MOSFETs: Interplay with Individual Dopants and Photons

2008 ◽  
Vol 1145 ◽  
Author(s):  
Michiharu Tabe ◽  
Zainal Arif Burhanudin ◽  
Ratno Nuryadi ◽  
Daniel Moraru ◽  
Maciej Ligowski ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Low Temperature ◽  
Selective Oxidation ◽  
Kelvin Probe Force Microscopy ◽  
Single Electron ◽  
Single Electron Transfer ◽  
Kelvin Probe ◽  
Photon Detection ◽  
Force Microscopy ◽  
Channel Region

AbstractWe have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described.

Potential profile evaluation of a diamond lateral p-n junction diode using Kelvin probe force microscopy

2015 ◽  
Vol 212 (11) ◽  
pp. 2589-2594
Author(s):  
Kazuya Shirota ◽  
Daisuke Takeuchi ◽  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Masahiko Ogura ◽  
...  
Keyword(s):  
Kelvin Probe Force Microscopy ◽  
Potential Profile ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Junction Diode

Potential profile and photovoltaic effect in nanoscale lateral pn junction observed by Kelvin probe force microscopy

2014 ◽  
Vol 557 ◽  
pp. 249-253 ◽  
Author(s):  
Roland Nowak ◽  
Daniel Moraru ◽  
Takeshi Mizuno ◽  
Ryszard Jablonski ◽  
Michiharu Tabe
Keyword(s):  
Photovoltaic Effect ◽  
Kelvin Probe Force Microscopy ◽  
Potential Profile ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Pn Junction

Cross-sectional potential profile across a BaSi2pn junction by Kelvin probe force microscopy

2015 ◽  
Vol 54 (3) ◽  
pp. 030306 ◽  
Author(s):  
Daichi Tsukahara ◽  
Masakazu Baba ◽  
Kentaro Watanabe ◽  
Takashi Kimura ◽  
Kosuke O. Hara ◽  
...  
Keyword(s):  
Kelvin Probe Force Microscopy ◽  
Potential Profile ◽  
Kelvin Probe ◽  
Cross Sectional ◽  
Force Microscopy
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