The micro-structure and composition evolution of Ti-Sb-Te alloy during reversible phase transition in phase change memory

Phase change PVA / PEG composite nanofibers were prepared by electrospinning, micro-morphology of PVA / PEG fibers with different weight content were analyzed, the phase change characteristics were also analyzed. The result showed that well distributed composite nanofibers which composed by PVA/PEG blend solution can be obtained by electrospinning.PVA fibreforming were influenced because of the existence of PEG, including bond, irregular block, small rough, uneven diameter distribution in fibers. PVA/PEG blend solution of 4:6 weight content was well fibreforming compared with other different weight content.The continuity of spinneret flow in electrospinning would directly affected by polymer solution consentrition and viscosity. Further research about which and the influence in fibers diameter and morphology will be explored. Composite nanofibers possessed reversible phase transition characteristics,Tm Essentially unchanged ,Tcwere related to the weight percentage of PEG/PVA, at the same time, the enthalpy will increase along with the gradually increase in weight percentage of PEG.

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The Effect of Channel Length on Phase Transition of Phase Change Memory

International Journal of Engineering & Technology ◽

10.14419/ijet.v7i3.11.15923 ◽

2018 ◽

Vol 7 (3.11) ◽

pp. 25

Author(s):

M S. A.Aziz ◽

F H. M.Fauzi ◽

Z Mohamad ◽

R I. Alip

Keyword(s):

Phase Transition ◽

Silicon Carbide ◽

Phase Change ◽

Pulse Width ◽

Crystalline State ◽

Phase Change Memory ◽

Amorphous State ◽

Channel Length ◽

Change Memory

The phase transition of germanium antimony tellurium (GST) and the temperature of GST were investigated using COMSOL Multiphysic 5.0 software. Silicon carbide was using as a heater layer in the separate heater structure of PCM. These simulations have a different channel of SiC. The temperature of GST and the phase transition of GST can be obtained from the simulation. From the simulation, the 300 nm channel of SiC can change the GST from amorphous to crystalline state at 0.7V with 100 ns pulse width. The 800 nm channel of SiC can change the GST from amorphous to crystalline state at 1.1V with 100 ns pulse width. Results demonstrated that the channel of SIC can affecting the temperature of GST and the GST changes from amorphous state to crystalline state. As the channel of SiC decreased, the temperature of GST was increased and the GST was change to crystalline state quickly.

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Unconventional phase transition of phase-change-memory materials for optical data storage

Chinese Physics B ◽

10.1088/1674-1056/ab3cc3 ◽

2019 ◽

Vol 28 (10) ◽

pp. 104202 ◽

Cited By ~ 1

Author(s):

Nian-Ke Chen ◽

Xian-Bin Li

Keyword(s):

Phase Transition ◽

Phase Change ◽

Data Storage ◽

Phase Change Memory ◽

Optical Data Storage ◽

Optical Data ◽

Change Memory

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Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse

Applied Physics Letters ◽

10.1063/1.3597792 ◽

2011 ◽

Vol 98 (24) ◽

pp. 242106 ◽

Cited By ~ 21

Author(s):

D. Q. Huang ◽

X. S. Miao ◽

Z. Li ◽

J. J. Sheng ◽

J. J. Sun ◽

...

Keyword(s):

Phase Transition ◽

Phase Change ◽

Electric Pulse ◽

Phase Change Memory ◽

Memory Cells ◽

Change Memory

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Phase transition characteristics of Al-Sb phase change materials for phase change memory application

Applied Physics Letters ◽

10.1063/1.4818662 ◽

2013 ◽

Vol 103 (7) ◽

pp. 072114 ◽

Cited By ~ 36

Author(s):

Xilin Zhou ◽

Liangcai Wu ◽

Zhitang Song ◽

Feng Rao ◽

Kun Ren ◽

...

Keyword(s):

Phase Transition ◽

Phase Change ◽

Phase Change Materials ◽

Phase Change Memory ◽

Change Memory

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Threshold switching and phase transition numerical models for phase change memory simulations

Journal of Applied Physics ◽

10.1063/1.2931951 ◽

2008 ◽

Vol 103 (11) ◽

pp. 111101 ◽

Cited By ~ 169

Author(s):

A. Redaelli ◽

A. Pirovano ◽

A. Benvenuti ◽

A. L. Lacaita

Keyword(s):

Phase Transition ◽

Phase Change ◽

Numerical Models ◽

Phase Change Memory ◽

Threshold Switching ◽

Change Memory

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Investigation of Phase Transition in Stacked Ge-Chalcogenide/SnTe Phase-change Memory Films

MRS Proceedings ◽

10.1557/proc-1056-hh11-70 ◽

2007 ◽

Vol 1056 ◽

Author(s):

Feiming Bai ◽

Surendra Gupta ◽

Archana Devasia ◽

Santosh Kurinec ◽

Morgan Davis ◽

...

Keyword(s):

Phase Transition ◽

Solid Solution ◽

Phase Change ◽

Phase Change Memory ◽

Thin Layers ◽

X Ray Diffraction ◽

X Ray ◽

Area Detector ◽

Memory Applications ◽

Change Memory

ABSTRACTPhase transitions in stacked GeTe/SnTe and Ge2Se3/SnTe thin layers for potential phase-change memory applications have been investigated by X-ray diffraction using a two-dimensional area detector system. The as-deposited underlying GeTe or Ge2Se3 layer is amorphous, whereas the top SnTe layer is crystalline. In the GeTe/SnTe stack, the crystallization of GeTe phase occurs near 170°C, and upon further heating, the GeTe phase disappears, followed by the formation of rocksalt-structured GexSn1−xTe solid solution. In the Ge2Se3/SnTe stack, the phase transition starts with the separation of a SnSe phase due to the migration of Sn ions into the Ge2Se3 layer. SnSe is believed to facilitate the crystallization of Ge2Se3-SnTe solid solution at ∼360°C, which is much lower than the crystallization temperature of Ge2Se3, therefore consuming less power during the phase transition.

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An Improved Electrical Switching and Phase-Transition Model for Scanning Probe Phase-Change Memory

Journal of Nanomaterials ◽

10.1155/2016/8078165 ◽

2016 ◽

Vol 2016 ◽

pp. 1-5 ◽

Cited By ~ 1

Author(s):

Lei Wang ◽

Si-Di Gong ◽

Jing Wen ◽

Ci Hui Yang

Keyword(s):

Phase Transition ◽

Phase Change ◽

Data Storage ◽

Writing Process ◽

Phase Change Memory ◽

Three Dimensional ◽

Scanning Probe ◽

Three Dimensional Model ◽

Current Voltage Curve ◽

Change Memory

Scanning probe phase-change memory (SPPCM) has been widely considered as one of the most promising candidates for next-generation data storage devices due to its fast switching time, low power consumption, and potential for ultra-high density. Development of a comprehensive model able to accurately describe all the physical processes involved in SPPCM operations is therefore vital to provide researchers with an effective route for device optimization. In this paper, we introduce a pseudo-three-dimensional model to simulate the electrothermal and phase-transition phenomena observed during the SPPCM writing process by simultaneously solving Laplace’s equation to model the electrical process, the classical heat transfer equation, and a rate equation to model phase transitions. The crystalline bit region of a typical probe system and the resulting current-voltage curve obtained from simulations of the writing process showed good agreement with experimental results obtained under an equivalent configuration, demonstrating the validity of the proposed model.

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