scholarly journals Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

2013 ◽  
Vol 103 (22) ◽  
pp. 224101 ◽  
Author(s):  
A. N. Hanna ◽  
M. T. Ghoneim ◽  
R. R. Bahabry ◽  
A. M. Hussain ◽  
M. M. Hussain
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Power ◽  
Thin Film Transistor ◽  
Wavy Channel ◽  
High Output ◽  
Area Efficient

scholarly journals Back Cover: Wavy channel thin film transistor architecture for area efficient, high performance and low power displays (Phys. Status Solidi RRL 3/2014)

2014 ◽  
Vol 8 (3) ◽  
Author(s):  
Amir N. Hanna ◽  
Galo A. Torres Sevilla ◽  
Mohamed T. Ghoneim ◽  
Aftab M. Hussain ◽  
Rabab R. Bahabry ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
High Performance ◽  
Thin Film Transistor ◽  
Wavy Channel ◽  
Back Cover ◽  
Area Efficient

Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

2013 ◽  
Vol 8 (3) ◽  
pp. 248-251 ◽  
Author(s):  
Amir N. Hanna ◽  
Galo A. Torres Sevilla ◽  
Mohamed T. Ghoneim ◽  
Aftab M. Hussain ◽  
Rabab R. Bahabry ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
High Performance ◽  
Thin Film Transistor ◽  
Wavy Channel ◽  
Area Efficient

scholarly journals Zinc Oxide Integrated Wavy Channel Thin-Film Transistor-Based High-Performance Digital Circuits

2016 ◽  
Vol 37 (2) ◽  
pp. 193-196 ◽  
Author(s):  
Amir N. Hanna ◽  
Aftab M. Hussain ◽  
Hesham Omran ◽  
Sarah Alsharif ◽  
Khaled N. Salama ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Performance ◽  
Digital Circuits ◽  
Thin Film Transistor ◽  
Wavy Channel

Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

2017 ◽  
Vol 31 (35) ◽  
pp. 1750332
Author(s):  
Yu-Rong Liu ◽  
Jie Liu ◽  
Jia-Qi Song ◽  
Pui-To Lai ◽  
Ruo-He Yao
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Practical Applications ◽  
Gate Structure ◽  
Dual Gate ◽  
Indium Gallium ◽  
Output Characteristics

An amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistor (TFT) with a planar split dual gate (PSDG) structure has been proposed, fabricated and characterized. Experimental results indicate that the two independent gates can provide dynamical control of device characteristics such as threshold voltage, sub-threshold swing, off-state current and saturation current. The transconductance extracted from the output characteristics of the device increases from [Formula: see text] to [Formula: see text] for a change of control gate voltage from −2 V to 2 V, and thus the device could be used in a variable-gain amplifier. A significant advantage of the PSDG structure is its flexibility in controlling the device performance according to the need of practical applications.

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