Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

2014 ◽  
Vol 104 (3) ◽  
pp. 032102 ◽  
Author(s):  
Chao Gao ◽  
Yunhao Lu ◽  
Peng Dong ◽  
Jun Yi ◽  
Xiangyang Ma ◽  
...  
Keyword(s):  
Atomic Level ◽  
Rapid Thermal Anneal ◽  
Czochralski Silicon ◽  
Boron Doped

Semi-Insulating Silicon for Microwave Devices

2009 ◽  
Vol 156-158 ◽  
pp. 101-106 ◽  
Author(s):  
Douglas M. Jordan ◽  
Kanad Mallik ◽  
Robert J. Falster ◽  
Peter R. Wilshaw
Keyword(s):  
Room Temperature ◽  
Energy Levels ◽  
Silicon On Insulator ◽  
Microwave Devices ◽  
Insulating Material ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Microwave Applications ◽  
Soi Substrates ◽  
Phosphorus Doped

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

1999 ◽  
Vol 146 (9) ◽  
pp. 3461-3465 ◽  
Author(s):  
T. Ono ◽  
A. Romanowski ◽  
E. Asayama ◽  
H. Horie ◽  
K. Sueoka ◽  
...  
Keyword(s):  
Dislocation Generation ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Induced Dislocation ◽  
Oxide Precipitate

scholarly journals Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

2016 ◽  
Vol 92 ◽  
pp. 801-807 ◽  
Author(s):  
Hiroaki Ichikawa ◽  
Isao Takahashi ◽  
Noritaka Usami ◽  
Katsuhiko Shirasawa ◽  
Hidetaka Takato
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Effective Carrier

Minority carrier lifetime degradation in boron-doped Czochralski silicon

2001 ◽  
Vol 90 (5) ◽  
pp. 2397-2404 ◽  
Author(s):  
S. W. Glunz ◽  
S. Rein ◽  
J. Y. Lee ◽  
W. Warta
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped

Oxygen diffusion in heavily antimony-, arsenic-, and boron-doped Czochralski silicon wafers

1999 ◽  
Vol 74 (24) ◽  
pp. 3648-3650 ◽  
Author(s):  
Toshiaki Ono ◽  
George A. Rozgonyi ◽  
Eiichi Asayama ◽  
Hiroshi Horie ◽  
Hideki Tsuya ◽  
...  
Keyword(s):  
Oxygen Diffusion ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Boron Doped
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