Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon

1999 ◽  
Vol 146 (9) ◽  
pp. 3461-3465 ◽  
Author(s):  
T. Ono ◽  
A. Romanowski ◽  
E. Asayama ◽  
H. Horie ◽  
K. Sueoka ◽  
...  
Keyword(s):  
Dislocation Generation ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Induced Dislocation ◽  
Oxide Precipitate

scholarly journals Dislocation generation mechanisms in heavily boron-doped diamond epilayers

2021 ◽  
Vol 118 (5) ◽  
pp. 052108
Author(s):  
D. Araujo ◽  
F. Lloret ◽  
G. Alba ◽  
M. P. Alegre ◽  
M. P. Villar
Keyword(s):  
Boron Doped Diamond ◽  
Dislocation Generation ◽  
Boron Doped ◽  
Generation Mechanisms

Semi-Insulating Silicon for Microwave Devices

2009 ◽  
Vol 156-158 ◽  
pp. 101-106 ◽  
Author(s):  
Douglas M. Jordan ◽  
Kanad Mallik ◽  
Robert J. Falster ◽  
Peter R. Wilshaw
Keyword(s):  
Room Temperature ◽  
Energy Levels ◽  
Silicon On Insulator ◽  
Microwave Devices ◽  
Insulating Material ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Microwave Applications ◽  
Soi Substrates ◽  
Phosphorus Doped

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

scholarly journals Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

2016 ◽  
Vol 92 ◽  
pp. 801-807 ◽  
Author(s):  
Hiroaki Ichikawa ◽  
Isao Takahashi ◽  
Noritaka Usami ◽  
Katsuhiko Shirasawa ◽  
Hidetaka Takato
Keyword(s):  
Room Temperature ◽  
Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped ◽  
Effective Carrier

scholarly journals On the Stress Dependence of Subgrain Size

1982 ◽  
Vol 5 (3) ◽  
pp. 127-152 ◽  
Author(s):  
G. H. Edward ◽  
M. A. Etheridge ◽  
B. E. Hobbs
Keyword(s):  
Material Properties ◽  
Subgrain Size ◽  
Dynamic Balance ◽  
Dislocation Generation ◽  
Proportionality Constant ◽  
Creep Stress ◽  
Dislocation Annihilation ◽  
Size Relation ◽  
Induced Dislocation ◽  
Environmental Dependence

A simple model of the dynamic balance between deformation induced dislocation generation and climb controlled dislocation annihilation in subgrain walls is outlined. This results in a stress-subgrain size relationship which involves various material properties, including the creep stress exponent and the creep diffusivity.Assuming a fixed slip distance for mobile dislocations, the theory predicts that the subgrain size (d) depends on the stress (σ) as d4∝σ−n, where n is the creep exponent, and the proportionality constant is dependent on material properties, temperature, and other environmental variables. This theoretical prediction is satisfactorily compared with published experimental results for a variety of materials.The implications of the environmental dependence of the stress-subgrain size relation with regard to its use as a palaeopiezometer in naturally deformed minerals are discussed.

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

Minority carrier lifetime degradation in boron-doped Czochralski silicon

2001 ◽  
Vol 90 (5) ◽  
pp. 2397-2404 ◽  
Author(s):  
S. W. Glunz ◽  
S. Rein ◽  
J. Y. Lee ◽  
W. Warta
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Czochralski Silicon ◽  
Boron Doped
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