Mechanism and CHARM2 Evaluation of P-Channel Metal Oxide Semiconductor Threshold Voltage Drop during High Density Plasma Heat-up Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.08hf02 ◽

2009 ◽

Vol 48 (8) ◽

pp. 08HF02 ◽

Author(s):

Dong-Hwan Kim ◽

Jeongyun Lee ◽

Min-Sung Kim ◽

Ken Tokashiki ◽

Kyoungsub Shin ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Voltage Drop ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

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Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.587139 ◽

1994 ◽

Vol 12 (1) ◽

pp. 427 ◽

Author(s):

J. Givens

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Semiconductor Technology ◽

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

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Control of Threshold Voltage in GaN Based Metal–Oxide–Semiconductor High-Electron Mobility Transistors towards the Normally-Off Operation

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.08jn08 ◽

2013 ◽

Vol 52 (8S) ◽

pp. 08JN08 ◽

Author(s):

Milan Ťapajna ◽

Ján Kuzmík

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.5.041302 ◽

2012 ◽

Vol 5 (4) ◽

pp. 041302 ◽

Author(s):

Mitsuo Okamoto ◽

Youichi Makifuchi ◽

Miwako Iijima ◽

Yoshiyuki Sakai ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Mobility ◽

Voltage Instability

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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Chinese Physics B ◽

10.1088/1674-1056/24/3/037303 ◽

2015 ◽

Vol 24 (3) ◽

pp. 037303

Author(s):

Min-Min Fan ◽

Jing-Ping Xu ◽

Lu Liu ◽

Yu-Rong Bai ◽

Yong Huang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fringing Capacitance

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Controlling the threshold voltage of a metal–oxide–semiconductor field effect transistor by molecular protonation of the Si:SiO[sub 2] interface

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491543 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1706 ◽

Author(s):

Jinman Yang ◽

L. de la Garza ◽

T. J. Thornton ◽

M. Kozicki ◽

D. Gust

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.08jc02 ◽

2010 ◽

Vol 49 (8) ◽

pp. 08JC02 ◽

Author(s):

Koji Eriguchi ◽

Yoshinori Nakakubo ◽

Asahiko Matsuda ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Plasma Process ◽

Voltage Instability ◽

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Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation

Applied Physics Letters ◽

10.1063/1.3549178 ◽

2011 ◽

Vol 98 (5) ◽

pp. 053501 ◽

Author(s):

Anri Nakajima ◽

Takashi Kudo ◽

Takashi Ito

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Power Operation ◽

Ultralow Power ◽

Tunnel Injection ◽

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Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors

Journal of Computational Electronics ◽

10.1007/s10825-020-01572-9 ◽

2020 ◽

Vol 19 (4) ◽

pp. 1478-1484

Author(s):

Wen-Li Sung ◽

Yiming Li

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Random Number ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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