High speed and low power consumption of superlattice-like Ge/Sb70Se30 thin films for phase change memory application

Abstract Ultrafast laser-induced phase/structural transitions show a great potential in optical memory and optical computing technologies, which are believed to have advantages of ultrafast speed, low power consumption, less heat diffusion and remote control as compared with electronic devices. Here, we review and discuss the principles of orbital-selective electronic excitation and its roles in phase/structural transitions of phase-change memory (PCM) materials, including Sc0.2Sb1.8Te3 and GeTe phases. It is demonstrated, that the mechanism can influence the dynamics or results of structural transitions, such as an ultrafast amorphization of Sc0.2Sb1.8Te3 and a non-volatile order-to-order structural transition of GeTe. Without thermal melting, these structural transitions have the advantages of ultrafast speed and low power consumption. It suggests that the orbital-selective electronic excitation can play a significant role in discovering new physics of phase change and shows a potential for new applications.

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Ultra-high speed and low-power superlattice-like Sn 18 Sb 82 –SnSe 2 thin films for phase change memory applications

Materials Letters ◽

10.1016/j.matlet.2015.10.036 ◽

2016 ◽

Vol 163 ◽

pp. 20-23 ◽

Cited By ~ 13

Author(s):

Ruirui Liu ◽

Zifang He ◽

Jiwei Zhai ◽

Sannian Song ◽

Zhitang Song ◽

...

Keyword(s):

Thin Films ◽

Low Power ◽

Phase Change ◽

High Speed ◽

Phase Change Memory ◽

Ultra High Speed ◽

Memory Applications ◽

Change Memory

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Material engineering in phase-change memory for low power consumption and multi-level storage

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2009.5394221 ◽

2009 ◽

Author(s):

You Yin ◽

T. Noguchi ◽

H. Ohno ◽

S. Hosaka

Keyword(s):

Power Consumption ◽

Low Power ◽

Phase Change ◽

Phase Change Memory ◽

Low Power Consumption ◽

Material Engineering ◽

Multi Level ◽

Change Memory

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Application of ordered mesoporous SiO2 film for low power consumption in phase-change memory

Microporous and Mesoporous Materials ◽

10.1016/j.micromeso.2012.07.039 ◽

2012 ◽

Vol 163 ◽

pp. 321-325 ◽

Cited By ~ 8

Author(s):

Tae-Jung Ha ◽

Hyung Keun Kim ◽

Doo Jin Choi ◽

Sangwoo Shin ◽

Hyung Hee Cho ◽

...

Keyword(s):

Power Consumption ◽

Low Power ◽

Phase Change ◽

Phase Change Memory ◽

Sio2 Film ◽

Low Power Consumption ◽

Ordered Mesoporous ◽

Mesoporous Sio2 ◽

Change Memory

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Investigation of Al-Sb-Se alloy for long data retention and low power consumption phase change memory application

Journal of Applied Physics ◽

10.1063/1.4891731 ◽

2014 ◽

Vol 116 (7) ◽

pp. 074304 ◽

Cited By ~ 4

Author(s):

Zhonghua Zhang ◽

Yifeng Gu ◽

Sannian Song ◽

Zhitang Song ◽

Yan Cheng ◽

...

Keyword(s):

Power Consumption ◽

Low Power ◽

Phase Change ◽

Phase Change Memory ◽

Low Power Consumption ◽

Data Retention ◽

Change Memory

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A Phase Change Memory Device Fabrication Technology Using Si2Sb2Te6 for Low Power Consumption Application

ECS Transactions ◽

10.1149/1.3567714 ◽

2019 ◽

Vol 34 (1) ◽

pp. 1053-1057 ◽

Cited By ~ 1

Author(s):

Ying Li ◽

Xudong Wan ◽

Zhitang Song ◽

Joseph Xie ◽

Bomy Chenc ◽

...

Keyword(s):

Power Consumption ◽

Low Power ◽

Phase Change ◽

Phase Change Memory ◽

Memory Device ◽

Device Fabrication ◽

Low Power Consumption ◽

Fabrication Technology ◽

Change Memory

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Integration of highly anisotropic multiferroic BaTiO3–Fe nanocomposite thin films on Si towards device applications

Nanoscale Advances ◽

10.1039/d0na00405g ◽

2020 ◽

Vol 2 (9) ◽

pp. 4172-4178

Author(s):

Matias Kalaswad ◽

Bruce Zhang ◽

Xuejing Wang ◽

Han Wang ◽

Xingyao Gao ◽

...

Keyword(s):

Thin Films ◽

Power Consumption ◽

Low Power ◽

High Speed ◽

Low Cost ◽

Low Power Consumption ◽

Silicon Substrates ◽

Critical Step ◽

Nanocomposite Thin Films ◽

Device Applications

Integration of highly anisotropic multiferroic thin films on silicon substrates is a critical step towards low-cost devices, especially high-speed and low-power consumption memories.

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