Highly transparent bipolar resistive switching memory with In-Ga-Zn-O semiconducting electrode in In-Ga-Zn-O/Ga2O3/In-Ga-Zn-O structure

2014 ◽  
Vol 105 (9) ◽  
pp. 093502 ◽  
Author(s):  
X. B. Yan ◽  
H. Hao ◽  
Y. F. Chen ◽  
Y. C. Li ◽  
W. Banerjee
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Semiconducting Electrode ◽  
Switching Memory

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory

2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Characteristics ◽  
Interface Type ◽  
Switching Memory ◽  
Filament Type

scholarly journals Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory

2016 ◽  
Vol 63 (11) ◽  
pp. 4279-4287 ◽  
Author(s):  
Zhongqiang Wang ◽  
Stefano Ambrogio ◽  
Simone Balatti ◽  
Scott Sills ◽  
Alessandro Calderoni ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

The Study of Au/TiO2/Au Resistive Switching Memory with Crosspoint Structure

2013 ◽  
Vol 652-654 ◽  
pp. 659-663 ◽  
Author(s):  
An Yan ◽  
Gang Liu ◽  
Chao Zhang ◽  
Liang Fang
Keyword(s):  
Resistive Switching ◽  
Good Stability ◽  
Switching Behavior ◽  
Experimental Result ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistive Switching Memory ◽  
Switching Memory

This paper presets a process of fabrication and measurements of Au/TiO2/Au resistive switching memory. The device was fabricated using crosspoint structure, and the electrode width and TiO2 film of which are 1 µm and 50 nm. According to our experimental result, resistive switching cells exhibit good stability and reliability with bipolar resistive switching behavior.

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