Transparent bipolar resistive switching memory on a flexible substrate with indium-zinc-oxide electrodes

2016 ◽  
Vol 69 (11) ◽  
pp. 1613-1618 ◽  
Author(s):  
Seung-Won Yeom ◽  
Hyeon Jun Ha ◽  
Junsu Park ◽  
Jae Won Shim ◽  
Byeong-Kwon Ju
Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.


2018 ◽  
Vol 20 (8) ◽  
pp. 5771-5779 ◽  
Author(s):  
Yanmei Sun ◽  
Dianzhong Wen ◽  
Xuduo Bai

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.


2013 ◽  
Vol 529 ◽  
pp. 389-393
Author(s):  
Hsueh-Chih Tseng ◽  
Ting-Chang Chang ◽  
Kai-Hung Cheng ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
...  

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