Note: An online testing method for lifetime projection of high power light-emitting diode under accelerated reliability test

2014 ◽  
Vol 85 (9) ◽  
pp. 096111 ◽  
Author(s):  
Qi Chen ◽  
Quan Chen ◽  
Xiaobing Luo
2010 ◽  
Author(s):  
Kyung-Mi Moon ◽  
Se-Hwan An ◽  
Hyung-Kun Kim ◽  
Jung-Hye Chae ◽  
Yong-Jo Park

2001 ◽  
Vol 40 (Part 2, No. 7A) ◽  
pp. L678-L680 ◽  
Author(s):  
Takeshi Yamatoya ◽  
Shigeaki Sekiguchi ◽  
Fumio Koyama ◽  
Kenichi Iga

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Xin Li ◽  
Xu Chen ◽  
Guo-Quan Lu

As a solid electroluminescent source, white light emitting diode (LED) has entered a practical stage and become an alternative to replace incandescent and fluorescent light sources. However, due to the increasing integration and miniaturization of LED chips, heat flux inside the chip is also increasing, which puts the packaging into the position to meet higher requirements of heat dissipation. In this study, a new interconnection material—nanosilver paste is used for the LED chip packaging to pursue a better optical performance, since high thermal conductivity of this material can help improve the efficiency of heat dissipation for the LED chip. The bonding ability of this new die-attach material is evaluated by their bonding strength. Moreover, high-power LED modules connected with nanosilver paste, Sn3Ag0.5Cu solder, and silver epoxy are aged under hygrothermal aging and temperature cycling tests. The performances of these LED modules are tested at different aging time. The results show that LED modules sintered with nanosilver paste have the best performance and stability.


2017 ◽  
Vol 28 (23) ◽  
pp. 17557-17569 ◽  
Author(s):  
Jiajie Fan ◽  
Mengni Zhang ◽  
Xiao Luo ◽  
Cheng Qian ◽  
Xuejun Fan ◽  
...  

Author(s):  
Sangmesh ◽  
◽  
Gopalakrishna Keshava Narayana ◽  
Manjunath Shiraganhalli Honnaiah ◽  
Krishna Venkatesh ◽  
...  

2011 ◽  
Vol 687 ◽  
pp. 215-221
Author(s):  
Yuan Yuan Han ◽  
Hong Guo ◽  
Xi Min Zhang ◽  
Fa Zhang Yin ◽  
Ke Chu ◽  
...  

With increasing of the input power of the chips in light emitting diode (LED), the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.


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