The role of beryllium in the band structure of MgZnO: Lifting the valence band maximum

2014 ◽  
Vol 105 (12) ◽  
pp. 122112 ◽  
Author(s):  
S. S. Chen ◽  
X. H. Pan ◽  
W. Chen ◽  
H. H. Zhang ◽  
W. Dai ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum

Location of the valence band maximum in the band structure of anisotropic 1T′−ReSe2

2018 ◽  
Vol 97 (16) ◽  
Author(s):  
P. Eickholt ◽  
J. Noky ◽  
E. F. Schwier ◽  
K. Shimada ◽  
K. Miyamoto ◽  
...  
Keyword(s):  
Band Structure ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum

scholarly journals An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Surface Passivation ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Valence Band Maximum ◽  
Ambient Conditions ◽  
Band Maximum ◽  
Point Tracking ◽  
Power Point

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

scholarly journals Synthesis of ZnO doped high valence S element and study of photogenerated charges properties

RSC Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 4422-4427 ◽  
Author(s):  
Lijing Zhang ◽  
Xiufang Zhu ◽  
Zhihui Wang ◽  
Shan Yun ◽  
Tan Guo ◽  
...  
Keyword(s):  
Uniform Distribution ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Band Maximum

The uniform distribution of S dopants elevated the valence band maximum by mixing S 3p with the upper valence band states of ZnO. The valence band maxima of S–ZnO was 0.37 eV higher than that of ZnO.

Valence-band maximum in the layered semiconductor WSe2: Application of constant-energy contour mapping by photoemission

1996 ◽  
Vol 53 (24) ◽  
pp. R16152-R16155 ◽  
Author(s):  
Th. Straub ◽  
K. Fauth ◽  
Th. Finteis ◽  
M. Hengsberger ◽  
R. Claessen ◽  
...  
Keyword(s):  
Valence Band ◽  
Valence Band Maximum ◽  
Layered Semiconductor ◽  
Constant Energy ◽  
Band Maximum ◽  
Contour Mapping ◽  
Energy Contour

Effects of the band offset on interfacial deep levels

1988 ◽  
Vol 3 (1) ◽  
pp. 164-166
Author(s):  
Richard P. Beres ◽  
Roland E. Allen ◽  
John D. Dow
Keyword(s):  
Valence Band ◽  
Energy Levels ◽  
Valence Band Maximum ◽  
Deep Levels ◽  
Band Offset ◽  
Valence Band Offset ◽  
Band Maximum ◽  
Antisite Defects

The energy levels of antisite defects at a GaAs/Ge (110) interface are calculated and shown to be essentially unaltered with respect to the GaAs valence band maximum by different choices of the valence band offset.

CATION ANTISITE DEFECTS AND ANTISITE-BASED-DEFECT COMPLEXES IN GaAs

1990 ◽  
Vol 04 (18) ◽  
pp. 1133-1136
Author(s):  
S.B. ZHANG
Keyword(s):  
Structural Change ◽  
Fermi Level ◽  
Valence Band ◽  
Valence Band Maximum ◽  
Recent Theory ◽  
Band Maximum ◽  
Defect Complexes ◽  
Atomic Exchange ◽  
Antisite Defects

Recent theory predicted that the Ga and B antisites in GaAs are bistable. As the Fermi level is lowered towards the valence-band maximum, a structural change from fourfold to threefold coordination will occur. The Ga antisite will undergo an atomic exchange in the presence of an As interstitial.

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