Characterization of external resistance effect and performance optimization in unipolar-type SiOx-based resistive switching memory

2014 ◽  
Vol 105 (13) ◽  
pp. 133501 ◽  
Author(s):  
Fei Zhou ◽  
Yao-Feng Chang ◽  
Kwangsub Byun ◽  
Burt Fowler ◽  
Jack C. Lee
Keyword(s):  
Resistive Switching ◽  
Performance Optimization ◽  
External Resistance ◽  
Resistive Switching Memory ◽  
And Performance ◽  
Switching Memory

Characterization of SiOx/HfOx Bilayer Resistive-Switching Memory Devices

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory

Characterization of resistive switching memory devices with tunnel barrier

2017 ◽  
Author(s):  
Sungjun Kim ◽  
Min-Hwi Kim ◽  
Tae-Hyeon Kim ◽  
Suhyun Bang ◽  
Dong Keun Lee ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tunnel Barrier ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Switching Memory
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