Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots

2014 ◽  
Vol 116 (13) ◽  
pp. 134301 ◽  
Author(s):  
J. M. Ulloa ◽  
D. F. Reyes ◽  
A. D. Utrilla ◽  
A. Guzman ◽  
A. Hierro ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Structural Properties ◽  
Layer Growth ◽  
Capping Layer ◽  
Layer Growth Rate

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 100 (3) ◽  
pp. 033508 ◽  
Author(s):  
A. Michon ◽  
I. Sagnes ◽  
G. Patriarche ◽  
G. Beaudoin ◽  
M. N. Mérat-Combes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Vapor Phase ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Layer Growth Rate ◽  
Cap Layer ◽  
Metal Organic

scholarly journals Turbulent shear-layer mixing: growth-rate compressibility scaling

2000 ◽  
Vol 414 ◽  
pp. 35-45 ◽  
Author(s):  
M. D. SLESSOR ◽  
M. ZHUANG ◽  
P. E. DIMOTAKIS
Keyword(s):  
Growth Rate ◽  
Shear Layer ◽  
Free Stream ◽  
Layer Growth ◽  
Turbulent Shear ◽  
Turbulent Shear Layer ◽  
Thermal Energy Conversion ◽  
Layer Growth Rate ◽  
Stream Density ◽  
Convective Mach Number

A new shear-layer growth-rate compressibility-scaling parameter is proposed as an alternative to the total convective Mach number, Mc. This parameter derives from considerations of compressibility as a means of kinetic-to-thermal-energy conversion and can be significantly different from Mc for flows with far-from-unity free-stream-density and speed-of-sound ratios. Experimentally observed growth rates are well-represented by the new scaling.

scholarly journals Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots

2010 ◽  
Vol 107 (7) ◽  
pp. 074309 ◽  
Author(s):  
J. M. Ulloa ◽  
P. M. Koenraad ◽  
M. Bonnet-Eymard ◽  
A. Létoublon ◽  
N. Bertru
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Capping Layer ◽  
Lattice Matched ◽  
Inp Quantum Dots

Effect of a Gas Pressure on the Growth Rate of AlN Layer

2013 ◽  
Vol 740-742 ◽  
pp. 107-110 ◽  
Author(s):  
E.N. Mokhov ◽  
A.A. Wolfson ◽  
O.P. Kazarova
Keyword(s):  
Growth Rate ◽  
High Pressures ◽  
Substrate Surface ◽  
Nitrogen Pressure ◽  
Layer Growth ◽  
Bulk Crystals ◽  
Layer Growth Rate ◽  
Pressure Interval ◽  
Adsorption Desorption ◽  
Wide Pressure

The dependence of the layer growth rate on a gas (argon, nitrogen) pressure inside the reactor has been examined in order to analyze the conditions of growth of AlN thick layers and bulk crystals by the sublimation sandwich-method. It is shown that the layer growth rate steadily increases as the pressure in the reactor decreases in a wide pressure interval 1–0.02 bar. This suggests that a key role in the layer growth kinetics is played by the source-to-substrate transfer of the components (Al, N), rather than the adsorption - desorption processes on the source and substrate surface. In addition the growth rate in argon atmosphere is much higher than in nitrogen one for the high pressures and is practically the same for the lowest (0.05 – 0.02 bar).

Effect of K2Cr2O7 Concentration on Army Green Ceramic Layer Formed of 2A12 Alloy by Micro-Arc Oxidation

2013 ◽  
Vol 756-759 ◽  
pp. 117-120
Author(s):  
Xiao Chao Shi ◽  
Jin Yong Xu ◽  
Cheng Gao ◽  
Gui Wang ◽  
Yi Qun Zhou
Keyword(s):  
Growth Rate ◽  
Wear Resistance ◽  
Surface Topography ◽  
Layer Growth ◽  
Ceramic Layer ◽  
Electrolyte System ◽  
Layer Growth Rate ◽  
Micro Arc Oxidation

2A12 alloy by MAO on main salts electrolyte system of phosphate sodium is investigated. By contrast test, the influences of arc starting voltage, the thickness of the ceramic layer , growth rate, and wear resistance with different K2Cr2O7concentration are analyzed. If K2Cr2O7concentration is 2.5g/L , the arc starting voltage reached the lowest, the surface topography is the best, the wear resistance is the well.

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