A correlation study of layer growth rate, thickness uniformity, stoichiometry, and hydrogen impurity level in HfO2 thin films grown by ALD between 100°C and 350°C

2020 ◽  
Vol 506 ◽  
pp. 144188 ◽  
Author(s):  
D. Blaschke ◽  
F. Munnik ◽  
J. Grenzer ◽  
L. Rebohle ◽  
H. Schmidt ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Correlation Study ◽  
Layer Growth ◽  
Impurity Level ◽  
Hydrogen Impurity ◽  
Thickness Uniformity ◽  
Layer Growth Rate

scholarly journals Turbulent shear-layer mixing: growth-rate compressibility scaling

2000 ◽  
Vol 414 ◽  
pp. 35-45 ◽  
Author(s):  
M. D. SLESSOR ◽  
M. ZHUANG ◽  
P. E. DIMOTAKIS
Keyword(s):  
Growth Rate ◽  
Shear Layer ◽  
Free Stream ◽  
Layer Growth ◽  
Turbulent Shear ◽  
Turbulent Shear Layer ◽  
Thermal Energy Conversion ◽  
Layer Growth Rate ◽  
Stream Density ◽  
Convective Mach Number

A new shear-layer growth-rate compressibility-scaling parameter is proposed as an alternative to the total convective Mach number, Mc. This parameter derives from considerations of compressibility as a means of kinetic-to-thermal-energy conversion and can be significantly different from Mc for flows with far-from-unity free-stream-density and speed-of-sound ratios. Experimentally observed growth rates are well-represented by the new scaling.

Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 100 (3) ◽  
pp. 033508 ◽  
Author(s):  
A. Michon ◽  
I. Sagnes ◽  
G. Patriarche ◽  
G. Beaudoin ◽  
M. N. Mérat-Combes ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Vapor Phase ◽  
Layer Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Layer Growth Rate ◽  
Cap Layer ◽  
Metal Organic

Effect of a Gas Pressure on the Growth Rate of AlN Layer

2013 ◽  
Vol 740-742 ◽  
pp. 107-110 ◽  
Author(s):  
E.N. Mokhov ◽  
A.A. Wolfson ◽  
O.P. Kazarova
Keyword(s):  
Growth Rate ◽  
High Pressures ◽  
Substrate Surface ◽  
Nitrogen Pressure ◽  
Layer Growth ◽  
Bulk Crystals ◽  
Layer Growth Rate ◽  
Pressure Interval ◽  
Adsorption Desorption ◽  
Wide Pressure

The dependence of the layer growth rate on a gas (argon, nitrogen) pressure inside the reactor has been examined in order to analyze the conditions of growth of AlN thick layers and bulk crystals by the sublimation sandwich-method. It is shown that the layer growth rate steadily increases as the pressure in the reactor decreases in a wide pressure interval 1–0.02 bar. This suggests that a key role in the layer growth kinetics is played by the source-to-substrate transfer of the components (Al, N), rather than the adsorption - desorption processes on the source and substrate surface. In addition the growth rate in argon atmosphere is much higher than in nitrogen one for the high pressures and is practically the same for the lowest (0.05 – 0.02 bar).

Effect of K2Cr2O7 Concentration on Army Green Ceramic Layer Formed of 2A12 Alloy by Micro-Arc Oxidation

2013 ◽  
Vol 756-759 ◽  
pp. 117-120
Author(s):  
Xiao Chao Shi ◽  
Jin Yong Xu ◽  
Cheng Gao ◽  
Gui Wang ◽  
Yi Qun Zhou
Keyword(s):  
Growth Rate ◽  
Wear Resistance ◽  
Surface Topography ◽  
Layer Growth ◽  
Ceramic Layer ◽  
Electrolyte System ◽  
Layer Growth Rate ◽  
Micro Arc Oxidation

2A12 alloy by MAO on main salts electrolyte system of phosphate sodium is investigated. By contrast test, the influences of arc starting voltage, the thickness of the ceramic layer , growth rate, and wear resistance with different K2Cr2O7concentration are analyzed. If K2Cr2O7concentration is 2.5g/L , the arc starting voltage reached the lowest, the surface topography is the best, the wear resistance is the well.

scholarly journals A Boundary Layer Transition Correlation for Concave Surfaces

1990 ◽  
Author(s):  
Farouk Hachem ◽  
Mark W. Johnson
Keyword(s):  
Boundary Layer ◽  
Growth Rate ◽  
Reynolds Numbers ◽  
Layer Growth ◽  
Boundary Layer Transition ◽  
Momentum Thickness ◽  
Free Stream Turbulence ◽  
Layer Growth Rate ◽  
Boundary Layer Growth ◽  
Boundary Layer Profile

The boundary layer profile is observed to be highly distorted by the momentum transfer associated with Taylor-Gortler vortices. This distortion has the effect or increasing the boundary layer growth rate and modifying the start-or-transition momentum thickness Reynolds numbers from the flat plate value. For modest curvatures, the vortices carry turbulence towards the blade which promotes transition, but as the curvature is increased further, the boundary layer profile shape is stabilised and transition is delayed. A model for the distorted boundary layer is presented and is used to predict the boundary layer growth rate and correlate the start or transition results in terms of the momentum thickness and blade radius Reynolds numbers and the free stream turbulence level. The degree or profile distortion needs to be accounted for when predicting the end or transition.

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

2010 ◽  
Vol 248 (3) ◽  
pp. 594-599 ◽  
Author(s):  
Roghaiyeh Ravash ◽  
Juergen Blaesing ◽  
Thomas Hempel ◽  
Martin Noltemeyer ◽  
Armin Dadgar ◽  
...  
Keyword(s):  
Growth Rate ◽  
Gallium Nitride ◽  
Layer Growth ◽  
High Index ◽  
Seeding Layer ◽  
Layer Growth Rate ◽  
Movpe Growth
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