Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors
2014 ◽
Vol 105
(14)
◽
pp. 142108
◽
Patrick Fiorenza
◽
Alessia Frazzetto
◽
Alfio Guarnera
◽
Mario Saggio
◽
Fabrizio Roccaforte
2018 ◽
Vol 57
(6S1)
◽
pp. 06HD03
◽
Yongxun Liu
◽
Hiroyuki Tanaka
◽
Norio Umeyama
◽
Kazuhiro Koga
◽
Sommawan Khumpuang
◽
...
2006 ◽
Vol 100
(7)
◽
pp. 074108
◽
Chih-Hsiang Hsu
◽
Ming-Tsong Wang
◽
Joseph Ya-Min Lee
Ryosho Nakane
◽
Shoichi Sato
◽
Masaaki Tanaka
2020 ◽
Vol 8
◽
pp. 9-14
◽
Ching-Sung Lee
◽
Yan-Ting Shen
◽
Wei-Chou Hsu
◽
Yi-Ping Huang
◽
Cheng-Yang You
2007 ◽
Vol 46
(4B)
◽
pp. 2054-2057
◽
Syunichi Watabe
◽
Shigetoshi Sugawa
◽
Akinobu Teramoto
◽
Tadahiro Ohmi
2019 ◽
Vol 12
(6)
◽
pp. 061003
◽
Kidist Moges
◽
Takuji Hosoi
◽
Takayoshi Shimura
◽
Heiji Watanabe
2009 ◽
Vol 48
(4)
◽
pp. 04C100
◽
Yuki Nakano
◽
Toshikazu Mukai
◽
Ryota Nakamura
◽
Takashi Nakamura
◽
Akira Kamisawa
2009 ◽
Vol 48
(9)
◽
pp. 091404
◽
Rino Choi
◽
Tea Wan Kim
◽
Hokyung Park
◽
Byoung Hun Lee
2001 ◽
Vol 90
(2)
◽
pp. 866-870
◽
2015 ◽
Vol 32
(12)
◽
pp. 127101
◽
Hua-Jun Shen
◽
Ya-Chao Tang
◽
Zhao-Yang Peng
◽
Xiao-Chuan Deng
◽
Yun Bai
◽
...