Effect of self assembled quantum dots on carrier mobility, with application to modeling the dark current in quantum dot infrared photodetectors

2016 ◽  
Vol 120 (12) ◽  
pp. 124506 ◽  
Author(s):  
Sarah Youssef ◽  
Yasser M. El-Batawy ◽  
Ahmed A. Abouelsaood
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
Carrier Mobility ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Self Assembled

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
O. Baklenov ◽  
E. T. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Quantum Dot Infrared Photodetectors

AbstractInAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots

2008 ◽  
Vol 20 (14) ◽  
pp. 1240-1242 ◽  
Author(s):  
Chi-Che Tseng ◽  
Shu-Ting Chou ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Spectral response, dark current, and noise analyses in resonant tunneling quantum dot infrared photodetectors

2016 ◽  
Vol 55 (30) ◽  
pp. 8494 ◽  
Author(s):  
Hamed Dehdashti Jahromi ◽  
Ali Mahmoodi ◽  
Mohammad Hossein Sheikhi ◽  
Abbas Zarifkar
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Resonant Tunneling ◽  
Spectral Response ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Responsivity–dark current relationship of quantum dot infrared photodetectors (QDIPs)

2009 ◽  
Vol 52 (6) ◽  
pp. 257-259 ◽  
Author(s):  
Y. Matsukura ◽  
Y. Uchiyama ◽  
H. Yamashita ◽  
H. Nishino ◽  
T. Fujii
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors ◽  
Relationship Of

Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

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