Modulation-doped quantum dot infrared photodetectors using self-assembled InAs quantum dots

2000 ◽  
Vol 7 (3-4) ◽  
pp. 499-502 ◽  
Author(s):  
S.-W Lee ◽  
K Hirakawa ◽  
Y Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Inas Quantum Dots ◽  
Quantum Dot Infrared Photodetectors ◽  
Self Assembled

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
O. Baklenov ◽  
E. T. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Quantum Dot Infrared Photodetectors

AbstractInAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots

2008 ◽  
Vol 20 (14) ◽  
pp. 1240-1242 ◽  
Author(s):  
Chi-Che Tseng ◽  
Shu-Ting Chou ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

The Strain Status of the Buried Self-assembled InAs quantum dots using MeV technique

2006 ◽  
Vol 916 ◽  
Author(s):  
Hsing-Yeh Wang ◽  
C.H. Chen ◽  
H. Niu ◽  
S.C. Wu ◽  
C.P. Lee
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Plane Strain ◽  
Growth Direction ◽  
Lateral Direction ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
First Time ◽  
Strain Status

AbstractThe strain status of the buried InAs self-assembled quantum dot was comprehended by measurement first time. Results show the in-plane strain is compressive and lattice in the growth direction is lager than the lattice of GaAs. The strain of the sample annealed at 650 degree relaxes in the growth direction. The growth and the lateral direction become relaxed in the sample annealed at 750 degree.

Quantum Dot Long-Wavelength Detectors

2001 ◽  
Vol 692 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Adrienne D. Stiff-Roberts ◽  
Sanjay Krishna ◽  
Steve Kennerly
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elevated Temperatures ◽  
Infrared Imaging ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dark Currents ◽  
Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

Lateral Transport through Self-Assembled InAs Quantum Dots Located in the Narrow Gap Electrodes

1999 ◽  
Vol 571 ◽  
Author(s):  
S. K. Jung ◽  
S. W. Hwang ◽  
J. H. Park ◽  
B. D. Min ◽  
E. K. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Differential Resistance ◽  
Electrode Spacing ◽  
Metal Electrodes ◽  
Inas Quantum Dots ◽  
Peak Structure ◽  
Current Voltage ◽  
Single Quantum Dot ◽  
Self Assembled

ABSTRACTWe have fabricated and characterized the lateral electron transport through InAs quantum dots with double barrier system. Aluminum metal electrodes with the inter-electrode spacing of 30 nm have been deposited on an InAs self-assembled quantum dot wafer to form the planar type quantum dot devices. Current peak structure and negative differential resistance effects are observed above 77 K in current-voltage characteristics. These results are interpreted as due to 3D-0D resonant tunneling through the single quantum dot positioned in between the electrodes.

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