Recent progress of III–V quantum dot infrared photodetectors on silicon

2019 ◽  
Vol 7 (46) ◽  
pp. 14441-14453 ◽  
Author(s):  
Aobo Ren ◽  
Liming Yuan ◽  
Hao Xu ◽  
Jiang Wu ◽  
Zhiming Wang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Infrared Photodetectors ◽  
Heterogeneous Integration ◽  
Si Substrates ◽  
Quantum Dot Infrared Photodetectors ◽  
Infrared Photodetection

Heterogeneous integration of III–V quantum dots on Si substrates for infrared photodetection is reviewed, focusing on direct epitaxial growth and bonding techniques over the last few years.

Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots

2008 ◽  
Vol 20 (14) ◽  
pp. 1240-1242 ◽  
Author(s):  
Chi-Che Tseng ◽  
Shu-Ting Chou ◽  
Yi-Hao Chen ◽  
Cheng-Nan Chen ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors

Quantum Dot Long-Wavelength Detectors

2001 ◽  
Vol 692 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Adrienne D. Stiff-Roberts ◽  
Sanjay Krishna ◽  
Steve Kennerly
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Elevated Temperatures ◽  
Infrared Imaging ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Long Wavelength ◽  
Quantum Dot Infrared Photodetectors ◽  
Dark Currents ◽  
Long Wavelength Infrared

AbstractLong-wavelength infrared detectors operating at elevated temperatures are critical for imaging applications. InAs/GaAs quantum dots are an important material for the design and fabrication of high-temperature infrared photodetectors. Quantum dot infrared photodetectors allow normal-incidence operation, in addition to low dark currents and multispectral response. The long intersubband relaxation time of electrons in quantum dots improves the responsivity of the detectors, contributing to better hightemperature performance. We have obtained extremely low dark currents (Idark = 1.7 pA, T = 100 K, Vbias = 0.1 V), high detectivities (D* = 2.9×108cmHz1/2/W, T = 100 K, Vbias = 0.2 V), and high operating temperatures (T = 150 K) for these quantum-dot detectors. These results, as well as infrared imaging with QDIPs, will be described and discussed.

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

2001 ◽  
Vol 692 ◽  
Author(s):  
Zhengmao Ye ◽  
Joe C. Campbell ◽  
Zhonghui Chen ◽  
O. Baklenov ◽  
E. T. Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Dark Current ◽  
High Performance ◽  
Infrared Photodetectors ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Quantum Dot Infrared Photodetectors

AbstractInAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots

2015 ◽  
Vol 14 (4) ◽  
pp. 603-607 ◽  
Author(s):  
Hemant Ghadi ◽  
Saumya Sengupta ◽  
Saikalash Shetty ◽  
Ashutosh Manohar ◽  
Akshay Balgarkashi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Infrared Photodetectors
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