Defect induced room temperature ferromagnetism in single crystal, poly-crystal, and nanorod ZnO: A comparative study

2018 ◽  
Vol 123 (16) ◽  
pp. 161507 ◽  
Author(s):  
B. Ghosh ◽  
Sekhar C. Ray ◽  
Mbule Pontsho ◽  
Sweety Sarma ◽  
Dilip K. Mishra ◽  
...  
2014 ◽  
Vol 23 (10) ◽  
pp. 106101 ◽  
Author(s):  
Nan-Nan Xu ◽  
Gong-Ping Li ◽  
Xiao-Dong Pan ◽  
Yun-Bo Wang ◽  
Jing-Sheng Chen ◽  
...  

2013 ◽  
Vol 102 (14) ◽  
pp. 142409 ◽  
Author(s):  
H. W. Zheng ◽  
Y. L. Yan ◽  
Z. C. Lv ◽  
S. W. Yang ◽  
X. G. Li ◽  
...  

2015 ◽  
Vol 41 (3) ◽  
pp. 3613-3617 ◽  
Author(s):  
Huilian Liu ◽  
Weijun Li ◽  
Xu Zhang ◽  
Yunfei Sun ◽  
Junlin Song ◽  
...  

2008 ◽  
Vol 20 (18) ◽  
pp. 3521-3527 ◽  
Author(s):  
Guo Zhong Xing ◽  
Jia Bao Yi ◽  
Jun Guang Tao ◽  
Tao Liu ◽  
Lai Mun Wong ◽  
...  

2013 ◽  
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Sreekanth K. Mahadeva ◽  
Jincheng Fan ◽  
Anis Biswas ◽  
G. M. Rao ◽  
K. S. Sreelatha ◽  
...  

1983 ◽  
Vol 27 ◽  
Author(s):  
W.J. Choyke ◽  
R.B. Irwin ◽  
J.N. Mcgruer ◽  
J.R. Townsend ◽  
N.J. Doyle ◽  
...  

ABSTRACTCrystals of float-zone, Czochralski, and Web Si having widely differing oxygen concentrations were imrplanted at 300°K with large fluences of hydrogen. Experiments using RBS/channeling, profilometry and microscopy are reported. For room temperature implants the step-height h, the distribution of displaced atoms ND(x) and the total number of displaced atoms/cm2 (aD) are all essentially independent of the oxygen convent of the Si.


2008 ◽  
Vol 93 (3) ◽  
pp. 033114 ◽  
Author(s):  
R. Jaafar ◽  
Y. Nehme ◽  
D. Berling ◽  
J. L. Bubendorff ◽  
A. Mehdaoui ◽  
...  

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