Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates

2017 ◽  
Vol 460 ◽  
pp. 1-4 ◽  
Author(s):  
Xiaoye Wang ◽  
Wenyuan Yang ◽  
Baojun Wang ◽  
Xianghai Ji ◽  
Shengyong Xu ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates

2001 ◽  
Vol 230 (3-4) ◽  
pp. 346-350 ◽  
Author(s):  
Y. Honda ◽  
Y. Kawaguchi ◽  
Y. Ohtake ◽  
S. Tanaka ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

GaAs Epitaxial Growth by ECR-MBE

1991 ◽  
Vol 223 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi ◽  
Tomohiro Shibata ◽  
Norio Yamamoto ◽  
Masatomo Fujimoto
Keyword(s):  
Low Temperatures ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Selective Area Growth ◽  
Desorption Process ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth ◽  
A New Technique

ABSTRACTElectron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen plasma, low temperature growth of GaAs on both substrates, and selective area growth of GaAs on both substrates partially covered with a silicon nitride (SiN) mask. The ability to clean and grow at low temperatures-assumed to be a benefit of using energetic particles—should permit us to grow layers on processed GaAs and/or Si substrates. The electrical properties of grown layers are also described. Selective area growth has been successfully carried out with no deposit on the mask or irregular growth at the mask edge. The desorption process introduced by impinging ions is found to play an important role in the selective area growth.

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

2017 ◽  
Author(s):  
K. Zhang ◽  
V. Ray ◽  
P. Herrera-Fierro ◽  
J. R. Sink ◽  
F. Toor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective area growth of Ga-polar GaN nanowire arrays by continuous-flow MOVPE: A systematic study on the effect of growth conditions on the array properties

2015 ◽  
Vol 252 (5) ◽  
pp. 1096-1103 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Blandine Alloing ◽  
Virginie Brändli ◽  
Denis Lefebvre ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
Systematic Study ◽  
Continuous Flow ◽  
Growth Conditions ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire
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