scholarly journals Correlating the silicon surface passivation to the nanostructure of low-temperature a-Si:H after rapid thermal annealing

2017 ◽  
Vol 122 (3) ◽  
pp. 035302 ◽  
Author(s):  
Bart Macco ◽  
Jimmy Melskens ◽  
Nikolas J. Podraza ◽  
Karsten Arts ◽  
Christopher Pugh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Silicon Surface Passivation

scholarly journals Improved Silicon Surface Passivation of APCVD Al2O3 by Rapid Thermal Annealing

2016 ◽  
Vol 92 ◽  
pp. 317-325 ◽  
Author(s):  
Lachlan E. Black ◽  
Thomas Allen ◽  
Keith R. McIntosh ◽  
Andres Cuévas
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Silicon Surface Passivation

NH3Plasma Interface Modification for Silicon Surface Passivation at Very Low Temperature

2008 ◽  
Vol 47 (7) ◽  
pp. 5320-5323 ◽  
Author(s):  
Yu Takahashi ◽  
Jin Nigo ◽  
Akiyoshi Ogane ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Interface Modification ◽  
Silicon Surface Passivation ◽  
Very Low Temperature

Silicon Surface Passivation for Heteroepitaxy by Hydrogen Termination

1989 ◽  
Vol 148 ◽  
Author(s):  
D.B. Fenner ◽  
D.K. Biegelsen ◽  
R.D. Bringans ◽  
B.S. Krusor
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Polar Solvent ◽  
Silicon Surfaces ◽  
Total Residue ◽  
Wet Chemical ◽  
Chemical Techniques ◽  
Silicon Surface Passivation ◽  
Hydrogen Termination

ABSTRACTResults are reported for XPS and LEED evaluations of Si(100) wafers cleaned, etched, andhydrogen terminated by various low — temperature, wet — chemical techniques. We have obtained especially promising results with the JPL spin — etch technique. Under quite practical tolerances for the spin etch, our XPS measurements indicate about lx10-2 monolayer (ML) of total residue. The LEED showed sharp spots in a (1x1) pattern. We review our experimental results and suggest an interpretation in termsof both the chemistry of silicon surfaces in contact with HF in a polar solvent, and thehydrodynamics of liquids on spinning surfaces.

Silicon surface passivation by metal layers for low-temperature epitaxy

1996 ◽  
Vol 163 (4) ◽  
pp. 470-473 ◽  
Author(s):  
Jürgen Kühnle ◽  
Ralf Bergmann ◽  
Jürgen H. Werner ◽  
Martin Albrecht
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Metal Layers ◽  
Silicon Surface Passivation ◽  
Low Temperature Epitaxy

Effects of Low Temperature Anneal on the Interface Properties of Thermal Silicon Oxide for Silicon Surface Passivation

2016 ◽  
Vol 16 (5) ◽  
pp. 4783-4787 ◽  
Author(s):  
Nagarajan Balaji ◽  
Cheolmin Park ◽  
Sungyoun Chung ◽  
Minkyu Ju ◽  
Jayapal Raja ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Silicon Oxide ◽  
Interface Properties ◽  
Silicon Surface Passivation
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